GD200HFY120C2S

GD200HFY120C2S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD200HFY120C2S 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 3/1/2016 1/9 SN0A GD200HFY120C2S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Values 1200 ±20 309 200 400 1006 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 1200 200 400 Unit V A A Values 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 3/1/2016 2/9 SN0A GD200HFY120C2S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=200A,VGE=15V, Tj=25oC IC=200A,VGE=15V, Tj=125oC IC=200A,VGE=15V, Tj=150oC IC=5.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 VCC=600V,IC=200A, RG=1.1Ω,VGE=±15V, Tj=25oC VCC=600V,IC=200A, RG=1.1Ω,VGE=±15V, Tj=125oC VCC=600V,IC=200A, RG=1.1Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. Typ. 3/1/2016 6.0 6.8 V 1.0 mA 400 nA 4.0 150 32 330 93 Ω ns ns ns ns 11.2 mJ 11.3 mJ 161 37 412 165 ns ns ns ns 19.8 mJ 17.0 mJ 161 43 433 185 ns ns ns ns 21.9 mJ 19.1 mJ 800 A 3/9 SN0A GD200HFY120C2S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=200A,VGE=0V,Tj=25oC IF=200A,VGE=0V,Tj=125oC IF=200A,VGE=0V,Tj=150oC Min. Typ. 1.65 1.65 1.65 17.6 VR=600V,IF=200A, -di/dt=5400A/μs,VGE=-15V Tj=25oC VR=600V,IF=200A, -di/dt=5400A/μs,VGE=-15V Tj=125oC VR=600V,IF=200A, -di/dt=5400A/μs,VGE=-15V Tj=150oC Max. 2.10 Units V μC 228 A 7.7 mJ 31.8 μC 238 A 13.8 mJ 36.6 μC 247 A 15.2 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Min. Typ. Max. 20 0.35 0.149 0.206 0.034 0.048 0.010 2.5 3.0 3/1/2016 4/9 K/W K/W 5.0 5.0 300 Unit nH mΩ N.m g SN0A GD200HFY120C2S IGBT Module 400 400 VGE=15V 350 300 300 250 250 IC [A] IC [A] 350 200 150 100 100 Tj=25℃ Tj=125℃ Tj=150℃ Tj=25℃ Tj=125℃ Tj=150℃ 50 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 5 Fig 1. IGBT Output Characteristics 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 60 100 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 48 42 VCC=600V RG=1.1Ω VGE=±15V 36 30 80 70 VCC=600V IC=200A VGE=±15V 60 50 24 40 18 30 12 20 6 10 0 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 90 E [mJ] 54 E [mJ] 200 150 50 VCE=20V 0 0 50 100 150 200 250 300 350 400 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 2 4 6 8 RG [Ω] 10 Fig 4. IGBT Switching Loss vs. RG 3/1/2016 5/9 SN0A 12 GD200HFY120C2S IGBT Module 1 500 Module IGBT 400 0.1 IC [A] ZthJC [K/W] 300 200 0.01 RG=1.1Ω VGE=±15V Tj=150oC 100 i: 1 2 3 4 ri[K/W]: 0.0090 0.0491 0.0477 0.0432 0.01 0.02 0.05 0.1 τi[s]: 0 0 350 700 VCE [V] 1050 0.001 0.001 1400 Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 400 20 Tj=25℃ Tj=125℃ Tj=150℃ 350 Erec Tj=125℃ Erec Tj=150℃ 16 300 12 E [mJ] IF [A] 250 200 8 150 100 VCC=600V RG=1.1Ω VGE=-15V 4 50 0 0 0 0.5 1 1.5 VF [V] 2 2.5 Fig 7. Diode Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 50 100 150 200 250 300 350 400 IF [A] Fig 8. Diode Switching Loss vs. IF 3/1/2016 6/9 SN0A GD200HFY120C2S IGBT Module 16 1 Erec Tj=125℃ 15 Erec Tj=150℃ Diode 14 0.1 ZthJC [K/W] E [mJ] 13 12 11 0.01 10 9 VCC=600V IF=200A VGE=-15V 8 0 1 2 3 4 5 6 7 8 9 10 11 RG [Ω] Fig 9. Diode Switching Loss vs. RG ©2016 STARPOWER Semiconductor Ltd. i: 1 2 3 4 ri[K/W]: 0.0122 0.0679 0.0660 0.0599 τi[s]: 0.01 0.02 0.05 0.1 0.001 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 3/1/2016 7/9 SN0A GD200HFY120C2S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 3/1/2016 8/9 SN0A GD200HFY120C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 3/1/2016 9/9 SN0A