GD75FSY120L3S

GD75FSY120L3S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD75FSY120L3S 1200V/75A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated heatsink using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2015 STARPOWER Semiconductor Ltd. 10/2/2015 1/6 Preliminary GD75FSY120L3S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 150 75 150 576 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 1200 75 150 Unit V A A Value 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2015 STARPOWER Semiconductor Ltd. 10/2/2015 2/6 Preliminary GD75FSY120L3S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=75A,VGE=15V, Tj=25oC IC=75A,VGE=15V, Tj=125oC IC=75A,VGE=15V, Tj=150oC IC=1.88mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=30V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=75A, RG=5.1Ω,VGE=±15V, Tj=25oC VCC=600V,IC=75A, RG=5.1Ω,VGE=±15V, Tj=125oC VCC=600V,IC=75A, RG=5.1Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2015 STARPOWER Semiconductor Ltd. 10/2/2015 Typ. Max. 1.65 2.10 1.95 Unit V 2.00 5.2 6.0 6.8 V 1.0 mA 100 nA 2.0 7.15 Ω nF 0.23 nF 0.48 219 42 271 261 μC ns ns ns ns 2.95 mJ 4.70 mJ 220 46 289 397 ns ns ns ns 4.00 mJ 7.65 mJ 222 46 295 410 ns ns ns ns 4.40 mJ 8.41 mJ 300 A 3/6 Preliminary GD75FSY120L3S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=75A,VGE=0V,Tj=25oC IF=75A,VGE=0V,Tj=125oC IF=75A,VGE=0V,Tj=150oC Min. Typ. 1.70 1.65 1.65 5.0 VR=600V,IF=75A, -di/dt=1400A/μs,VGE=-15V Tj=25oC VR=600V,IF=75A, -di/dt=1400A/μs,VGE=-15V Tj=125oC VR=600V,IF=75A, -di/dt=1400A/μs,VGE=-15V Tj=150oC Max. 2.15 Unit V μC 81 A 3.40 mJ 11.0 μC 97 A 6.02 mJ 12.5 μC 106 A 6.62 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation Test Conditions TC=100oC,R100=493.3Ω B25/50 B-value R2=R25exp[B25/50(1/T21/(298.15K))] Min. Typ. 5.0 -5 Max. 5 20.0 3375 Unit kΩ % mW K Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH F G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Mounting Force Per Clamp Weight of Module ©2015 STARPOWER Semiconductor Ltd. Min. Typ. 40 4.00 0.236 0.405 0.351 0.603 0.037 40 10/2/2015 Max. 0.260 0.446 4/6 K/W K/W 80 39 Unit nH mΩ N g Preliminary GD75FSY120L3S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2015 STARPOWER Semiconductor Ltd. 10/2/2015 5/6 Preliminary GD75FSY120L3S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2015 STARPOWER Semiconductor Ltd. 10/2/2015 6/6 Preliminary