GD900HFY120P1S

GD900HFY120P1S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD900HFY120P1S 1200V/900A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electric vehicle and solar power. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Isolated copper baseplate using DBC technology High power and thermal cycling capability Typical Applications    High Power Converter Solar Power Hybrid and Electric Vehicle Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 9/7/2016 1/10 SN0B GD900HFY120P1S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Values 1200 ±20 1522 900 1800 5.24 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 1200 900 1800 Unit V A A Value 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A kW Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 9/7/2016 2/10 SN0B GD900HFY120P1S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=900A,VGE=15V, Tj=25oC IC=900A,VGE=15V, Tj=125oC IC=900A,VGE=15V, Tj=150oC IC=22.5mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 VCC=600V,IC=900A, RG=1.6Ω,VGE=±15V, Tj=25oC VCC=600V,IC=900A, RG=1.6Ω,VGE=±15V, Tj=125oC VCC=600V,IC=900A, RG=1.6Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. Typ. 9/7/2016 6.0 6.8 V 1.0 mA 400 nA 214 150 721 206 ns ns ns ns 76 mJ 128 mJ 235 161 824 412 ns ns ns ns 107 mJ 165 mJ 235 161 876 464 ns ns ns ns 112 mJ 180 mJ 3600 A 3/10 SN0B GD900HFY120P1S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=900A,VGE=0V,Tj=25oC IF=900A,VGE=0V,Tj=125oC IF=900A,VGE=0V,Tj=150oC Min. VR=600V,IF=900A, -di/dt=4800A/μs,VGE=-15V Tj=25oC VR=600V,IF=900A, -di/dt=4800A/μs,VGE=-15V Tj=125oC VR=600V,IF=900A, -di/dt=4800A/μs,VGE=-15V Tj=150oC Typ. 1.90 1.85 1.80 86 Max. 2.25 Unit V μC 475 A 36.1 mJ 143 μC 618 A 71.3 mJ 185 μC 665 A 75.1 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] ©2016 STARPOWER Semiconductor Ltd. 9/7/2016 Typ. 5.0 -5 Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K 4/10 SN0B GD900HFY120P1S IGBT Module Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M4 Terminal Connection Torque, Screw M8 Mounting Torque, Screw M5 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Min. Typ. 18 0.30 Max. 28.6 51.9 14.0 25.3 4.5 1.8 8.0 3.0 9/7/2016 5/10 K/kW K/kW 2.1 10 6.0 825 Unit nH mΩ N.m g SN0B GD900HFY120P1S IGBT Module 1800 1800 VGE=15V 1500 25oC 1200 IC [A] IC [A] 1500 25oC 1200 VCE=20V 900 150oC 900 150oC 600 600 300 300 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 5 Fig 1. IGBT Output Characteristics 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT Transfer Characteristics 500 1000 VCC=600V RG=1.6Ω VGE=±15V Tj=150oC 400 VCC=600V IC=900A VGE=±15V Tj=150oC 800 E [mJ] 600 E [mJ] 300 Eoff 200 400 Eon 100 Eon 200 Eoff 0 0 0 300 600 900 1200 1500 1800 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 4 8 RG [Ω] 12 Fig 4. IGBT Switching Loss vs. RG 9/7/2016 6/10 SN0B 16 GD900HFY120P1S IGBT Module 2000 100 1800 Module 1600 IGBT ZthJC [K/kW] 1400 IC [A] 1200 1000 800 10 600 RG=1.6Ω VGE=±15V Tj=150oC 400 200 i: 1 2 3 ri[K/kW]: 1.0 5.9 19.4 0.0008 0.013 0.05 τi[s]: 0 0 350 700 1050 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 1800 120 1500 100 1200 80 E [mJ] IF [A] 1 0.001 1400 4 2.3 0.6 900 Erec 60 150oC 600 40 25oC 300 VCC=600V RG=1.6Ω VGE=-15V Tj=150oC 20 0 0 0 0.5 1 1.5 2 VF [V] 2.5 3 Fig 7. Diode Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 300 600 900 1200 1500 1800 IF [A] Fig 8. Diode Switching Loss vs. IF 9/7/2016 7/10 SN0B GD900HFY120P1S IGBT Module 100 80 Diode ZthJC [K/kW] E [mJ] 60 Erec 40 10 VCC=600V IF=900A VGE=-15V Tj=150oC 20 i: 1 2 3 ri[K/kW]: 4.3 12.2 34.4 0.0008 0.013 0.05 τi[s]: 0 0 4 8 RG [Ω] 12 16 Fig 9. Diode Switching Loss vs. RG 1 0.001 0.01 0.1 t [s] 1 R [kΩ] 10 1 0.1 30 60 90 o TC [ C] 120 10 Fig 10. Diode Transient Thermal Impedance 100 0 4 1.0 0.6 150 Fig 11. NTC Temperature Characteristic ©2016 STARPOWER Semiconductor Ltd. 9/7/2016 8/10 SN0B GD900HFY120P1S IGBT Module Circuit Schematic 9 5 6 4 3 8 7 1 2 10 Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 9/7/2016 9/10 SN0B GD900HFY120P1S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 9/7/2016 10/10 SN0B