GD600HFY120C2S

GD600HFY120C2S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD600HFY120C2S 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using HPS DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 3/10/2016 1/9 SF0A GD600HFY120C2S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 1000 600 1200 3409 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 1200 600 1200 Unit V A A Value 175 -40 to +150 -40 to +125 4000 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 3/10/2016 2/9 SF0A GD600HFY120C2S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=600A,VGE=15V, Tj=25oC IC=600A,VGE=15V, Tj=125oC IC=600A,VGE=15V, Tj=150oC IC=24.0mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.65 2.10 1.95 Unit V 2.00 5.3 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=600A, RG=1.5Ω,VGE=±15V, Tj=25oC VCC=600V,IC=600A, RG=1.5Ω,VGE=±15V, Tj=125oC VCC=600V,IC=600A, RG=1.5Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=800V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. Typ. 3/10/2016 5.8 6.3 V 1.0 mA 400 nA 1.3 39.4 Ω nF 2.14 nF 4.62 257 96 628 103 μC ns ns ns ns 37.5 mJ 51.5 mJ 268 107 659 144 ns ns ns ns 53.5 mJ 77.3 mJ 278 118 680 155 ns ns ns ns 58.9 mJ 82.4 mJ 2400 A 3/9 SF0A GD600HFY120C2S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=600A,VGE=0V,Tj=25oC IF=600A,VGE=0V,Tj=125oC IF=600A,VGE=0V,Tj=150oC Min. Typ. 1.65 1.65 1.65 61.4 VCC=600V,IF=600A, -di/dt=5000A/μs,VGE=-15V, Tj=25oC VCC=600V,IF=600A, -di/dt=5000A/μs,VGE=-15V, Tj=125oC VCC=600V,IF=600A, -di/dt=5000A/μs,VGE=-15V, Tj=150oC Max. 2.10 Unit V μC 280 A 20.9 mJ 114 μC 415 A 43.1 mJ 128 μC 443 A 50.0 mJ Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Min. Typ. 0.35 2.5 3.0 3/10/2016 0.109 0.194 0.035 300 4/9 Max. 20 0.044 0.078 Unit nH mΩ K/W K/W 5.0 5.0 N.m g SF0A GD600HFY120C2S IGBT Module 1200 1200 VGE=15V 1000 VCE=20V 1000 800 800 600 IC [A] IC [A] 25oC 150oC 400 600 400 150oC 200 200 25oC 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 0 3.5 Fig 1. IGBT Output Characteristics 7 8 9 10 11 12 13 VGE [V] 550 VCC=600V RG=1.5Ω VGE=±15V Tj=150oC 180 160 140 VCC=600V IC=600A VGE=±15V Tj=150oC 500 450 400 350 100 E [mJ] 120 E [mJ] 6 Fig 2. IGBT Transfer Characteristics 200 Eoff 80 300 Eon 250 200 60 Eon 40 20 0 5 150 100 Eoff 50 0 200 400 600 800 1000 1200 IC [A] Fig 3. IGBT Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 0 3 6 9 RG [Ω] 12 Fig 4. IGBT Switching Loss vs. RG 3/10/2016 5/9 SF0A 15 GD600HFY120C2S IGBT Module 0.1 1400 Module 1200 IGBT ZthJC [K/W] IC [A] 1000 800 600 0.01 400 RG=1.5Ω VGE=±15V Tj=150oC 200 0 0 350 i: 1 2 3 4 ri[K/W]: 0.0025 0.0146 0.0141 0.0128 0.01 0.02 0.05 0.1 τi[s]: 700 1050 VCE [V] 0.001 0.001 1400 Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 1200 60 1000 50 Erec 40 E [mJ] IF [A] 800 600 400 30 20 VCC=600V RG=1.5Ω VGE=-15V Tj=150oC 150oC 200 0 10 25oC 0 0.4 0.8 1.2 1.6 VF [V] 2 2.4 Fig 7. Diode Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 0 300 600 IF [A] 900 Fig 8. Diode Switching Loss vs. IF 3/10/2016 6/9 SF0A 1200 GD600HFY120C2S IGBT Module 0.1 55 Diode 50 45 40 Erec ZthJC [K/W] E [mJ] 35 30 25 20 VCC=600V IF=600A VGE=-15V Tj=150oC 15 10 5 0 0.01 0 3 6 9 RG [Ω] i: 1 2 3 4 ri[K/W]: 0.0046 0.0257 0.0250 0.0227 τi[s]: 0.01 0.02 0.05 0.1 12 15 Fig 9. Diode Switching Loss vs. RG ©2016 STARPOWER Semiconductor Ltd. 0.001 0.001 0.01 0.1 t [s] 1 10 Fig 10. Diode Transient Thermal Impedance 3/10/2016 7/9 SF0A GD600HFY120C2S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 3/10/2016 8/9 SF0A GD600HFY120C2S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 3/10/2016 9/9 SF0A