GD75FFX65C5S

GD75FFX65C5S IGBT Module STARPOWER IGBT SEMICONDUCTOR GD75FFX65C5S 650V/75A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd. 12/28/2018 1/10 preliminary GD75FFX65C5S IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=80oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 650 ±20 103 75 150 267 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Value 650 75 150 Unit V A A Value 175 -40 to +150 -40 to +125 2500 Unit o C o C o C V A A W Diode Symbol VRRM IF IFM Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2018 STARPOWER Semiconductor Ltd. 12/28/2018 2/10 preliminary GD75FFX65C5S IGBT Module IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=75A,VGE=15V, Tj=25oC IC=75A,VGE=15V, Tj=125oC IC=75A,VGE=15V, Tj=150oC IC=1.20mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=75A, RG=5.1Ω,VGE=±15V, Tj=25oC VCC=300V,IC=75A, RG=5.1Ω,VGE=±15V, Tj=125oC VCC=300V,IC=75A, RG=5.1Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤650V ©2018 STARPOWER Semiconductor Ltd. 12/28/2018 Typ. Max. 1.45 1.90 1.60 Unit V 1.70 5.1 5.8 6.5 V 1.0 mA 400 nA 4.0 8.69 Ω nF 0.17 nF 0.52 20 16 160 68 μC ns ns ns ns 0.36 mJ 1.36 mJ 20 18 180 96 ns ns ns ns 0.48 mJ 1.84 mJ 20 19 184 112 ns ns ns ns 0.56 mJ 1.92 mJ 380 A 3/10 preliminary GD75FFX65C5S IGBT Module Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=75A,VGE=0V,Tj=25oC IF=75A,VGE=0V,Tj=125oC IF=75A,VGE=0V,Tj=150oC Min. VR=300V,IF=75A, -di/dt=3960A/μs,VGE=-15V Tj=25oC VR=300V,IF=75A, -di/dt=3960A/μs,VGE=-15V Tj=125oC VR=300V,IF=75A, -di/dt=3960A/μs,VGE=-15V Tj=150oC Typ. 1.55 1.50 1.45 Max. 1.95 Unit V 4.1 μC 105 A 0.99 mJ 7.0 μC 116 A 1.65 mJ 7.7 μC 121 A 1.93 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] ©2018 STARPOWER Semiconductor Ltd. 12/28/2018 Typ. 5.0 -5 Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K 4/10 preliminary GD75FFX65C5S IGBT Module Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RthJC RthCH M G Parameter Stray Inductance Module Lead Resistance, Terminal to Chip Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) Mounting Torque, Screw M5 Weight of Module ©2018 STARPOWER Semiconductor Ltd. Min. Typ. 19 1.80 Max. 0.561 0.886 0.196 0.310 0.020 3.0 12/28/2018 5/10 K/W K/W 6.0 200 Unit nH mΩ N.m g preliminary GD75FFX65C5S IGBT Module 150 150 VCE=20V 125 125 100 100 IC [A] IC [A] VGE=15V 75 50 75 50 25 25 Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCE [V] 6 Fig 1. IGBT Output Characteristics 7 8 9 10 VGE [V] 11 12 Fig 2. IGBT Transfer Characteristics 4 10 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 3.5 3 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 9 8 7 VCC=300V RG=5.1Ω VGE=±15V 6 E [mJ] 2.5 E [mJ] Tj=25℃ Tj=125℃ Tj=150℃ 2 5 VCC=300V IC=75A VGE=±15V 4 1.5 3 1 2 0.5 1 0 0 0 30 60 90 IC [A] 120 150 Fig 3. IGBT Switching Loss vs. IC ©2018 STARPOWER Semiconductor Ltd. 0 5 10 15 20 25 30 35 40 45 50 55 RG [Ω] Fig 4. IGBT Switching Loss vs. RG 12/28/2018 6/10 preliminary GD75FFX65C5S IGBT Module 160 1 IGBT 140 Module 120 ZthJC [K/W] IC [A] 100 80 60 RG=5.1Ω VGE=±15V Tj=150oC 40 20 i: 1 2 3 4 ri[K/W]: 0.0336 0.1850 0.1797 0.1627 0.01 0.02 0.05 0.1 τi[s]: 0 0 0.01 0.001 100 200 300 400 500 600 700 VCE [V] Fig 5. RBSOA 0.01 0.1 t [s] 1 10 Fig 6. IGBT Transient Thermal Impedance 150 3 Tj=25℃ Tj=125℃ Tj=150℃ 125 Erec,Tj=125℃ Erec,Tj=150℃ 2.5 2 E [mJ] 100 IF [A] 0.1 75 1.5 50 1 25 0.5 0 VCC=300V RG=5.1Ω VGE=-15V 0 0 0.4 0.8 1.2 VF [V] 1.6 2 Fig 7. Diode Forward Characteristics ©2018 STARPOWER Semiconductor Ltd. 0 30 60 90 IF [A] 120 Fig 8. Diode Switching Loss vs. IF 12/28/2018 7/10 preliminary 150 GD75FFX65C5S IGBT Module 1 2.5 Diode Erec,Tj=125℃ Erec,Tj=150℃ 2 E [mJ] ZthJC [K/W] VCC=300V IF=75A VGE=-15V 1.5 1 0.1 0.5 i: 1 2 3 4 ri[K/W]: 0.0531 0.2923 0.2837 0.2569 0.01 0.02 0.05 0.1 τi[s]: 0 0 10 20 30 40 RG [Ω] 50 60 Fig 9. Diode Switching Loss vs. RG 0.01 0.001 0.01 0.1 t [s] 1 Fig 10. Diode Transient Thermal Impedance 100 R [kΩ] 10 1 0.1 0 30 60 90 o TC [ C] 120 10 150 Fig 11. NTC Temperature Characteristic ©2018 STARPOWER Semiconductor Ltd. 12/28/2018 8/10 preliminary GD75FFX65C5S IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters 24 1 ©2018 STARPOWER Semiconductor Ltd. 17 12 12/28/2018 9/10 preliminary GD75FFX65C5S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2018 STARPOWER Semiconductor Ltd. 12/28/2018 10/10 preliminary