DG25X12T2

DG25X12T2 IGBT Discrete DOSEMI IGBT DG25X12T2 1200V/25A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features         Low VCE(sat) Trench IGBT technology 10μs short circuit capability Low switching loss Maximum junction temperature 175oC Low inductance case VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 1/11/2019 1/9 Preliminary DG25X12T2 IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=110oC Pulsed Collector Current tp limited by Tjmax Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 50 25 100 573 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current @ TC=110oC Diode Maximum Forward Current tp limited by Tjmax Value 1200 25 100 Unit V A A Values -40 to +175 -55 to +150 260 0.6 Unit o C o C o C N.m A A W Diode Symbol VRRM IF IFM Discrete Symbol Tjop TSTG TS M Description Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s Mounting Torque, Screw M3 ©2019 STARPOWER Semiconductor Ltd. 1/11/2019 2/9 Preliminary DG25X12T2 IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=25A,VGE=15V, Tj=25oC IC=25A,VGE=15V, Tj=125oC IC=25A,VGE=15V, Tj=150oC IC=0.63mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=600V,IC=25A, RG=20Ω,VGE=±15V, Tj=25oC VCC=600V,IC=25A, RG=20Ω,VGE=±15V, Tj=125oC VCC=600V,IC=25A, RG=20Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2019 STARPOWER Semiconductor Ltd. 1/11/2019 Typ. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 6.0 6.8 V 1.0 mA 400 nA 0 2.59 Ω nF 0.07 nF 0.19 28 17 196 185 μC ns ns ns ns 1.71 mJ 1.49 mJ 28 21 288 216 ns ns ns ns 2.57 mJ 2.21 mJ 28 22 309 227 ns ns ns ns 2.78 mJ 2.42 mJ 100 A 3/9 Preliminary DG25X12T2 IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=25A,VGE=0V,Tj=25oC IF=25A,VGE=0V,Tj=125oC IF=25A,VGE=0V,Tj=150oC Min. Typ. 2.20 2.30 2.25 1.43 VR=600V,IF=25A, -di/dt=880A/μs,VGE=-15V Tj=25oC VR=600V,IF=25A, -di/dt=880A/μs,VGE=-15V Tj=125oC VR=600V,IF=25A, -di/dt=880A/μs,VGE=-15V Tj=150oC Max. 2.65 Unit V μC 34 A 0.75 mJ 2.4 μC 42 A 1.61 mJ 2.6 μC 44 A 2.10 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RthJC RthJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2019 STARPOWER Semiconductor Ltd. Min. Typ. 40 1/11/2019 4/9 Max. 0.262 0.495 Unit K/W K/W Preliminary DG25X12T2 IGBT Discrete 50 50 VGE=15V VCE=20V 30 30 IC [A] 40 IC [A] 40 20 20 10 10 Tj=25℃ Tj=125℃ Tj=150℃ Tj=25℃ Tj=125℃ Tj=150℃ 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 Fig 1. IGBT-inverter Output Characteristics 5 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT-inverter Transfer Characteristics 10 14 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 9 8 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 12 10 7 5 E [mJ] VCC=600V RG=20Ω VGE=±15V 6 E [mJ] 6 4 3 VCC=600V IC=25A VGE=±15V 8 6 4 2 2 1 0 0 0 10 20 30 IC [A] 40 50 Fig 3. IGBT-inverter Switching Loss vs. IC ©2019 STARPOWER Semiconductor Ltd. 0 40 80 120 RG [Ω] 160 200 Fig 4. IGBT-inverter Switching Loss vs. RG 1/11/2019 5/9 Preliminary DG25X12T2 IGBT Discrete 1 60 Module 50 IGBT ZthJC [K/W] IC [A] 40 30 0.1 20 RG=20Ω VGE=±15V Tj=150oC 10 i: 1 2 3 4 ri[K/W]: 0.0925 0.0775 0.0699 0.0221 0.1100 0.0156 0.00135 0.000151 τi[s]: 0 0 0.01 0.0001 200 400 600 800 1000 1200 1400 VCE [V] Fig 5. IGBT-inverter RBSOA 0.001 0.01 t [s] 0.1 1 Fig 6. IGBT-inverter Transient Thermal Impedance 50 3 Tj=25℃ Tj=125℃ Tj=150℃ Erec Tj=125℃ Erec Tj=150℃ 2.5 40 2 IF [A] E [mJ] 30 1.5 20 1 10 VCC=600V RG=20Ω VGE=-15V 0.5 0 0 0 0.5 1 1.5 2 VF [V] 2.5 3 3.5 Fig 7. Diode-inverter Forward Characteristics ©2019 STARPOWER Semiconductor Ltd. 0 10 20 30 IF [A] 40 50 Fig 8. Diode-inverter Switching Loss vs. IF 1/11/2019 6/9 Preliminary DG25X12T2 IGBT Discrete 1 2.5 Erec Tj=125℃ Diode Erec Tj=150℃ 2 E [mJ] ZthJC [K/W] 1.5 1 0.5 0.1 VCC=600V IF=25A VGE=-15V i: 1 2 3 4 ri[K/W]: 0.0955 0.1320 0.1659 0.1016 0.0723 0.00813 0.00109 0.000155 τi[s]: 0 0 40 80 120 RG [Ω] 160 200 Fig 9. Diode-inverter Switching Loss vs. RG ©2019 STARPOWER Semiconductor Ltd. 0.01 0.0001 0.001 0.01 t [s] 0.1 1 Fig 10. Diode-inverter Transient Thermal Impedance 1/11/2019 7/9 Preliminary DG25X12T2 IGBT Discrete Circuit Schematic Package Dimensions 5±0.2 3.7±0.2 4.1±0.2 21+0.3 -0.2 6.1±0.2 15.8±0.3 10.8±0.2 φ3 .5 5± 0. 25 Dimensions in Millimeters 3.1±0.2 19.9±0.5 2.1±0.2 2.35±0.25 1.2±0.2 5.45±0.2 5.45±0.2 ©2019 STARPOWER Semiconductor Ltd. 0.6 1/11/2019 8/9 Preliminary DG25X12T2 IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2019 STARPOWER Semiconductor Ltd. 1/11/2019 9/9 Preliminary