DG10X06T1

DG10X06T1 IGBT Discrete DOSEMI IGBT DG10X06T1 600V/10A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features       Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2020 STARPOWER Semiconductor Ltd. 10/2/2020 1/9 A02 DG10X06T1 IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp limited by Tjmax Maximum Power Dissipation @ Tj=175oC Value 600 ±20 25 19 30 196 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp limited by Tjmax Value 600 25 30 Unit V A A Values -40 to +175 -55 to +150 260 0.6 Unit o C o C o C N.m A A W Diode Symbol VRRM IF IFM Discrete Symbol Tjop TSTG TS M Description Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s Mounting Torque, Screw M3 ©2020 STARPOWER Semiconductor Ltd. 10/2/2020 2/9 A02 DG10X06T1 IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=10A,VGE=15V, Tj=25oC IC=10A,VGE=15V, Tj=125oC IC=10A,VGE=15V, Tj=150oC IC=0.16mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. Max. 1.45 1.90 1.60 Unit V 1.70 5.2 VCE=25V,f=1MHz, VGE=0V VGE=-15…+15V VCC=300V,IC=10A, RG=27Ω,VGE=±15V, Tj=25oC VCC=300V,IC=10A, RG=27Ω,VGE=±15V, Tj=125oC VCC=300V,IC=10A, RG=27Ω,VGE=±15V, Tj=150oC tP≤6μs,VGE=15V, Tj=150oC,VCC=360V, VCEM≤600V ©2020 STARPOWER Semiconductor Ltd. Typ. 10/2/2020 5.8 6.5 V 1.0 mA 400 nA 0 1.16 Ω nF 0.02 nF 0.07 10 7 80 68 μC ns ns ns ns 0.11 mJ 0.19 mJ 10 10 96 104 ns ns ns ns 0.16 mJ 0.24 mJ 10 11 100 108 ns ns ns ns 0.18 mJ 0.26 mJ 50 A 3/9 A02 DG10X06T1 IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IC=10A,VGE=0V,Tj=25oC IC=10A,VGE=0V,Tj=125oC IC=10A,VGE=0V,Tj=150oC Min. Typ. 1.20 1.10 1.10 0.55 VR=300V,IF=10A, -di/dt=1600A/μs,VGE=-15V Tj=25oC VR=300V,IF=10A, -di/dt=1600A/μs,VGE=-15V Tj=125oC VR=300V,IF=10A, -di/dt=1600A/μs,VGE=-15V Tj=150oC Max. 1.65 Units V μC 19.8 A 0.12 mJ 0.84 μC 20.9 A 0.22 mJ 1.21 μC 23.1 A 0.29 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RthJC RthJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2020 STARPOWER Semiconductor Ltd. Min. Typ. Max. 0.766 1.340 62 10/2/2020 Unit K/W K/W 4/9 A02 DG10X06T1 IGBT Discrete 20 20 VGE=15V VCE=20V 18 16 16 14 14 12 12 IC [A] IC [A] 18 10 10 8 8 6 6 4 4 Tj=25℃ 2 Tj=125℃ Tj=25℃ Tj=125℃ Tj=150℃ 2 0 0 0.5 1 1.5 2 VCE [V] Tj=150℃ 0 2.5 3 Fig 1. IGBT-inverter Output Characteristics 5 6 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT-inverter Transfer Characteristics 0.6 1 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ 0.5 Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ 0.8 Eoff,Tj=150℃ 0.4 E [mJ] E [mJ] 0.6 0.3 0.4 0.2 VCC=300V RG=27Ω VGE=±15V 0.1 0.2 0 VCC=300V IC=10A VGE=±15V 0 0 5 10 IC [A] 15 20 Fig 3. IGBT-inverter Switching Loss vs. IC ©2020 STARPOWER Semiconductor Ltd. 0 50 100 150 200 RG [Ω] 250 300 Fig 4. IGBT-inverter Switching Loss vs. RG 10/2/2020 5/9 A02 DG10X06T1 IGBT Discrete 1 22 20 IGBT 18 16 ZthJC [K/W] IC [A] 14 12 10 0.1 8 RG=27Ω VGE=±15V Tj=150oC 6 4 i: 1 2 3 4 ri[K/W]: 0.2704 0.2264 0.2046 0.0646 τi[s]: 0.1100 0.0156 0.00135 0.000151 2 0.01 0.0001 0 0 150 300 450 VCE [V] 600 750 Fig 5. IGBT-inverter RBSOA 0.001 0.01 t [s] 0.1 1 Fig 6. IGBT-inverter Transient Thermal Impedance 20 0.5 Erec,Tj=125℃ Tj=25℃ Tj=125℃ Erec,Tj=150℃ Tj=150℃ 0.4 15 E [mJ] IF [A] 0.3 10 0.2 5 0.1 0 VCC=300V RG=27Ω VGE=-15V 0 0 0.2 0.4 0.6 0.8 1 VF [V] 1.2 1.4 1.6 Fig 7. Diode-inverter Forward Characteristics ©2020 STARPOWER Semiconductor Ltd. 0 5 10 IF [A] 15 20 Fig 8. Diode-inverter Switching Loss vs. IF 10/2/2020 6/9 A02 DG10X06T1 IGBT Discrete 0.5 10 Erec,Tj=125℃ Erec,Tj=150℃ 0.4 Diode E [mJ] ZthJC [K/W] 0.3 0.2 0.1 1 VCC=300V IF=10A VGE=-15V i: 1 2 3 4 ri[K/W]: 0.2586 0.3574 0.4490 0.2750 τi[s]: 0.0723 0.00813 0.00109 0.000155 0 0 50 100 150 200 RG [Ω] 250 300 Fig 9. Diode-inverter Switching Loss vs. RG ©2020 STARPOWER Semiconductor Ltd. 0.1 0.0001 0.001 0.01 t [s] 0.1 1 Fig 10. Diode-inverter Transient Thermal Impedance 10/2/2020 7/9 A02 DG10X06T1 IGBT Discrete Circuit Schematic 2 1 3 Package Dimensions Dimensions in Millimeters ©2020 STARPOWER Semiconductor Ltd. 10/2/2020 8/9 A02 DG10X06T1 IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2020 STARPOWER Semiconductor Ltd. 10/2/2020 9/9 A02