DG40X12T2

DG40X12T2 IGBT Discrete DOSEMI IGBT DG40X12T2 1200V/40A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as electronic welder. Features       Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package TO-247 Typical Applications  Electronic welder Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 7/11/2016 1/9 Preliminary DG40X12T2 IGBT Discrete Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Values 1200 ±20 80 40 80 487 Unit V V Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values 1200 40 80 Unit V A A Values 175 -40 to +150 -40 to +150 260 0.6 Unit o C o C o C o C N.m A A W Diode Symbol VRRM IF IFM Discrete Symbol Tjmax Tjop TSTG TS M Description Maximum Junction Temperature(inverter,brake) Operating Junction Temperature Storage Temperature Range Soldering Temperature,1.6mm from case for 10s Mounting Torque, Screw M3 ©2016 STARPOWER Semiconductor Ltd. 7/11/2016 2/9 Preliminary DG40X12T2 IGBT Discrete IGBT Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint Cies Cres QG td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Input Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Test Conditions IC=40A,VGE=15V, Tj=25oC IC=40A,VGE=15V, Tj=125oC IC=40A,VGE=15V, Tj=150oC IC=0.40mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCE=30V,f=1MHz, VGE=0V VGE=15V VCC=600V,IC=40A, RG=10Ω,VGE=±15V, Tj=25oC VCC=600V,IC=40A, RG=10Ω,VGE=±15V, Tj=125oC VCC=600V,IC=40A, RG=10Ω,VGE=±15V, Tj=150oC ©2016 STARPOWER Semiconductor Ltd. 7/11/2016 Typ. Max. 1.75 2.20 2.10 Unit V 2.15 4.5 5.5 6.5 V 1.0 mA 400 nA / 6.05 Ω nF 0.11 nF 0.32 57 48 320 80 μC ns ns ns ns 1.63 mJ 1.39 mJ 70 65 370 153 ns ns ns ns 1.95 mJ 1.74 mJ 75 65 385 183 ns ns ns ns 2.14 mJ 1.91 mJ 3/9 Preliminary DG40X12T2 IGBT Discrete Diode Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IC=40A,VGE=0V,Tj=25oC IC=40A,VGE=0V,Tj=125oC IC=40A,VGE=0V,Tj=150oC Min. Typ. 2.50 2.70 2.75 1.6 VR=600V,IF=40A, -di/dt=1000A/μs,VGE=-15V Tj=25oC VR=600V,IF=40A, -di/dt=1000A/μs,VGE=-15V Tj=125oC VR=600V,IF=40A, -di/dt=1000A/μs,VGE=-15V Tj=150oC Max. 2.95 Units V μC 39 A 0.85 mJ 2.7 μC 48 A 1.83 mJ 3.0 μC 50 A 2.4 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol RθJC RθJA Parameter Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Junction-to-Ambient ©2016 STARPOWER Semiconductor Ltd. Min. Typ. 40 7/11/2016 4/9 Max. 0.308 0.801 Unit K/W K/W Preliminary DG40X12T2 IGBT Discrete 80 80 VGE=15V 70 60 60 50 25oC 40 IC [A] IC [A] 50 150oC 40 150oC 30 30 20 20 10 10 0 25oC 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 Fig 1. IGBT-inverter Output Characteristics 4 5 6 7 8 9 VGE [V] 10 11 12 Fig 2. IGBT-inverter Transfer Characteristics 8 4.5 VCC=600V RG=10Ω VGE=15V Tj=150oC 4 3.5 VCC=600V IC=40A VGE=±15V Tj=150oC 7 6 3 5 2.5 E [mJ] E [mJ] VCE=20V 70 Eon 2 Eon 4 3 1.5 Eoff 1 2 Eoff 1 0.5 0 0 0 10 20 30 40 50 60 70 80 IC [A] Fig 3. IGBT-inverter Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 20 40 60 RG [Ω] 80 100 Fig 4. IGBT-inverter Switching Loss vs. RG 7/11/2016 5/9 Preliminary DG40X12T2 IGBT Discrete 90 1 80 IGBT 70 ZthJC [K/W] IC [A] 60 50 40 0.1 30 RG=10Ω VGE=±15V Tj=150oC 20 10 i: 1 2 3 4 ri[K/W]: 0.1089 0.0910 0.0821 0.0260 0.1100 0.0156 0.00135 0.000151 τi[s]: 0 0 0.01 0.0001 200 400 600 800 1000 1200 1400 VCE [V] Fig 5. IGBT-inverter RBSOA 0.001 0.01 t [s] 0.1 1 Fig 6. IGBT-inverter Transient Thermal Impedance 80 3 72 2.5 64 56 25oC Erec 2 E [mJ] IF [A] 48 40 1.5 32 24 150oC 16 1 VCC=600V RG=10Ω VGE=-15V Tj=150oC 0.5 8 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VF [V] Fig 7. Diode-inverter Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 8 16 24 32 40 48 56 64 72 80 IF [A] Fig 8. Diode-inverter Switching Loss vs. IF 7/11/2016 6/9 Preliminary DG40X12T2 IGBT Discrete 1 2.50 Diode 2.00 Erec E [mJ] ZthJC [K/W] 1.50 1.00 VCC=600V IF=40A VGE=-15V Tj=150oC 0.50 i: 1 2 3 4 ri[K/W]: 0.1089 0.0910 0.0821 0.0260 0.0723 0.00813 0.00109 0.000155 τi[s]: 0.00 0 20 40 60 RG [Ω] 80 100 Fig 9. Diode-inverter Switching Loss vs. RG ©2016 STARPOWER Semiconductor Ltd. 0.1 0.0001 0.001 0.01 t [s] 0.1 1 Fig 10. Diode-inverter Transient Thermal Impedance 7/11/2016 7/9 Preliminary DG40X12T2 IGBT Discrete Circuit Schematic Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 7/11/2016 8/9 Preliminary DG40X12T2 IGBT Discrete Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 7/11/2016 9/9 Preliminary