GD300HFY120C6S
IGBT Module
STARPOWER
SEMICONDUCTOR
IGBT
GD300HFY120C6S
1200V/300A 2 in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverter and UPS.
Features
Low VCE(sat) Trench IGBT technology
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175oC
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Isolated copper baseplate using DBC technology
Typical Applications
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
Equivalent Circuit Schematic
©2015 STARPOWER Semiconductor Ltd.
12/18/2015
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GD300HFY120C6S
IGBT Module
Absolute Maximum Ratings TC=25oC unless otherwise noted
IGBT
Symbol
VCES
VGES
IC
ICM
PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ TC=25oC
@ TC=100oC
Pulsed Collector Current tp=1ms
Maximum Power Dissipation @ Tj=175oC
Value
1200
±20
480
300
600
1613
Unit
V
V
Description
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current
Diode Maximum Forward Current tp=1ms
Value
1200
300
600
Unit
V
A
A
Value
175
-40 to +150
-40 to +125
2500
Unit
o
C
o
C
o
C
V
A
A
W
Diode
Symbol
VRRM
IF
IFM
Module
Symbol
Tjmax
Tjop
TSTG
VISO
Description
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage RMS,f=50Hz,t=1min
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12/18/2015
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GD300HFY120C6S
IGBT Module
IGBT Characteristics TC=25oC unless otherwise noted
Symbol
VCE(sat)
VGE(th)
ICES
IGES
RGint
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
Parameter
Collector to Emitter
Saturation Voltage
Gate-Emitter Threshold
Voltage
Collector Cut-Off
Current
Gate-Emitter Leakage
Current
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
SC Data
Test Conditions
IC=300A,VGE=15V,
Tj=25oC
IC=300A,VGE=15V,
Tj=125oC
IC=300A,VGE=15V,
Tj=150oC
IC=7.50mA,VCE=VGE,
Tj=25oC
VCE=VCES,VGE=0V,
Tj=25oC
VGE=VGES,VCE=0V,
Tj=25oC
Min.
Max.
1.70
2.15
1.95
Unit
V
2.00
5.2
VCC=600V,IC=300A,
RG=1.3Ω,VGE=±15V,
Tj=25oC
VCC=600V,IC=300A,
RG=1.3Ω,VGE=±15V,
Tj=125oC
VCC=600V,IC=300A,
RG=1.3Ω,VGE=±15V,
Tj=150oC
tP≤10μs,VGE=15V,
Tj=150oC,VCC=900V,
VCEM≤1200V
©2015 STARPOWER Semiconductor Ltd.
Typ.
12/18/2015
6.0
6.8
V
1.0
mA
400
nA
2.5
182
54
464
72
Ω
ns
ns
ns
ns
10.6
mJ
25.8
mJ
193
54
577
113
ns
ns
ns
ns
18.2
mJ
38.6
mJ
203
54
618
124
ns
ns
ns
ns
20.9
mJ
43.3
mJ
1200
A
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GD300HFY120C6S
IGBT Module
Diode Characteristics TC=25oC unless otherwise noted
Symbol
VF
Qr
IRM
Erec
Qr
IRM
Erec
Qr
IRM
Erec
Parameter
Diode Forward
Voltage
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Recovered Charge
Peak Reverse
Recovery Current
Reverse Recovery
Energy
Test Conditions
IF=300A,VGE=0V,Tj=25oC
IF=300A,VGE=0V,Tj=125oC
IF=300A,VGE=0V,Tj=150oC
Min.
Typ.
1.65
1.65
1.65
29
VCC=600V,IF=300A,
-di/dt=6050A/μs,VGE=-15V,
Tj=25oC
VCC=600V,IF=300A,
-di/dt=6050A/μs,VGE=-15V,
Tj=125oC
VCC=600V,IF=300A,
-di/dt=6050A/μs,VGE=-15V,
Tj=150oC
Max.
2.10
Unit
V
μC
318
A
18.1
mJ
55
μC
371
A
28.0
mJ
64
μC
390
A
32.8
mJ
NTC Characteristics TC=25oC unless otherwise noted
Symbol
R25
∆R/R
P25
Parameter
Rated Resistance
Deviation of R100
Power
Dissipation
B25/50
B-value
B25/80
B-value
B25/100
B-value
Test Conditions
Min.
TC=100 oC,R100=493.3Ω
Typ.
5.0
Max.
5
Unit
kΩ
%
20.0
mW
-5
R2=R25exp[B25/50(1/T21/(298.15K))]
R2=R25exp[B25/80(1/T21/(298.15K))]
R2=R25exp[B25/100(1/T21/(298.15K))]
3375
K
3411
K
3433
K
Module Characteristics TC=25oC unless otherwise noted
Symbol
LCE
RCC’+EE’
RthJC
RthCH
M
G
Parameter
Stray Inductance
Module Lead Resistance, Terminal to Chip
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
Terminal Connection Torque, Screw M6
Mounting Torque, Screw M5
Weight of Module
©2015 STARPOWER Semiconductor Ltd.
Min.
Typ.
20
1.10
Max.
0.093
0.155
0.029
0.048
0.009
3.0
3.0
K/W
K/W
6.0
6.0
350
12/18/2015
Unit
nH
mΩ
N.m
g
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GD300HFY120C6S
IGBT Module
600
600
550
500
500
450
450
400
400
25oC
150oC
300
VCE=20V
350
IC [A]
350
IC [A]
550
VGE=15V
300
250
250
200
200
150
150
100
100
50
50
0
150oC
25oC
0
0
0.5
1
1.5 2 2.5
VCE [V]
3
3.5
5
Fig 1. IGBT Output Characteristics
6
7
8 9 10 11 12 13
VGE [V]
Fig 2. IGBT Transfer Characteristics
100
120
VCC=600V
RG=1.3Ω
VGE=±15V
Tj=150oC
90
80
70
100
80
E [mJ]
E [mJ]
60
Eoff
50
60
Eon
Eoff
40
40
30
20
Eon
VCC=600V
IC=300A
VGE=±15V
Tj=150oC
20
10
0
0
0
100 200 300 400 500 600
IC [A]
Fig 3. IGBT Switching Loss vs. IC
©2015 STARPOWER Semiconductor Ltd.
0
2
4
6
8
RG [Ω]
10
12
Fig 4. IGBT Switching Loss vs. RG
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GD300HFY120C6S
IGBT Module
1
700
Module
600
IGBT
500
ZthJC [K/W]
IC [A]
0.1
400
300
0.01
200
RG=1.3Ω
VGE=±15V
Tj=150oC
100
i:
1
2
3
4
ri[K/W]: 0.0054 0.0308 0.0298 0.0270
0.01
0.02
0.05
0.1
τi[s]:
0
0
350
700
VCE [V]
1050
0.001
0.001
1400
Fig 5. RBSOA
0.1
t [s]
1
10
Fig 6. IGBT Transient Thermal Impedance
600
50
550
45
500
40
450
Erec
35
400
30
E [mJ]
350
IF [A]
0.01
300
250
25
20
150oC
200
150
VCC=600V
RG=1.3Ω
VGE=-15V
Tj=150oC
15
25oC
10
100
5
50
0
0
0
0.5
1
1.5
2
VF [V]
2.5
3
Fig 7. Diode Forward Characteristics
©2015 STARPOWER Semiconductor Ltd.
0
100
200
300 400
IF [A]
500
Fig 8. Diode Switching Loss vs. IF
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600
GD300HFY120C6S
IGBT Module
1
35
VCC=600V
IF=300A
VGE=-15V
Tj=150oC
30
Diode
0.1
ZthJC [K/W]
E [mJ]
25
Erec
20
0.01
15
i:
1
2
3
4
ri[K/W]: 0.0093 0.0511 0.0496 0.0450
τi[s]:
0.01
0.02
0.05
0.1
10
0
2
4
6
8
RG [Ω]
10
12
14
Fig 9. Diode Switching Loss vs. RG
0.001
0.001
0.01
0.1
t [s]
1
Fig 10. Diode Transient Thermal Impedance
100
R [kΩ]
10
1
0.1
0
30
60
90
o
TC [ C]
120
10
150
Fig 11. NTC Temperature Characteristic
©2015 STARPOWER Semiconductor Ltd.
12/18/2015
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GD300HFY120C6S
IGBT Module
Circuit Schematic
Package Dimensions
Dimensions in Millimeters
9
8
6
7
5
4
10
11
3
1 2
A
B
©2015 STARPOWER Semiconductor Ltd.
12/18/2015
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SN0A
GD300HFY120C6S
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained
staff. you and your technical departments will have to evaluate the suitability of the product
for the intended application and the completeness of the product data with respect to such
application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the
supply agreement. There will be no guarantee of any kind for the product and its
characteristics.
Should you require product information in excess of the data given in this product data sheet
or which concerns the specific application of our product, please contact the sales office,
which is responsible for you (see www.powersemi.cc), For those that are specifically
interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For
information on the types in question please contact the sales office, which is responsible for
you.
Should you intend to use the Product in aviation applications, in health or live endangering or
life support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2015 STARPOWER Semiconductor Ltd.
12/18/2015
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