GD100PIY120C6SN

GD100PIY120C6SN IGBT Module STARPOWER IGBT SEMICONDUCTOR GD100PIY120C6SN 1200V/100A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications    Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic ©2016 STARPOWER Semiconductor Ltd. 2/5/2016 1/13 SN0C GD100PIY120C6SN IGBT Module Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT-inverter Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Value 1200 ±20 155 100 200 511 Unit V V Value 1200 100 200 Unit V A A Value 1600 100 1100 6050 Unit V A A A2s Value 1200 ±20 125 75 150 432 Unit V V Value 1200 35 70 Unit V A A Value 175 150 -40 to +150 -40 to +125 2500 Unit A A W Diode-inverter Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Diode-rectifier Symbol VRRM IO IFSM I2t Description Repetitive Peak Reverse Voltage Average Output Current 50Hz/60Hz,sine wave Surge Forward Current VR=0V,tp=10ms,Tj=45oC I2t-value,VR=0V,tp=10ms,Tj=45oC IGBT-brake Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC A A W Diode-brake Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature(inverter,brake) Maximum Junction Temperature (rectifier) Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min ©2016 STARPOWER Semiconductor Ltd. 2/5/2016 2/13 o C o C C V o SN0C GD100PIY120C6SN IGBT Module IGBT-inverter Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=100A,VGE=15V, Tj=25oC IC=100A,VGE=15V, Tj=125oC IC=100A,VGE=15V, Tj=150oC IC=2.50mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCC=600V,IC=100A, RG=1.6Ω,VGE=±15V, Tj=25oC VCC=600V,IC=100A, RG=1.6Ω,VGE=±15V, Tj=125oC VCC=600V,IC=100A, RG=1.6Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. 2/5/2016 Typ. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 6.0 6.8 V 1.0 mA 100 nA 7.5 170 32 360 86 Ω ns ns ns ns 5.90 mJ 6.05 mJ 180 42 470 165 ns ns ns ns 9.10 mJ 9.35 mJ 181 43 480 186 ns ns ns ns 10.0 mJ 10.5 mJ 400 A 3/13 SN0C GD100PIY120C6SN IGBT Module Diode-inverter Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=100A,VGE=0V,Tj=25oC IF=100A,VGE=0V,Tj=125oC IF=100A,VGE=0V,Tj=150oC Min. VR=600V,IF=100A, -di/dt=2800A/μs,VGE=-15V Tj=25oC VR=600V,IF=100A, -di/dt=2800A/μs,VGE=-15V Tj=125oC VR=600V,IF=100A, -di/dt=2800A/μs,VGE=-15V Tj=150oC Typ. 1.70 1.65 1.65 9.0 Max. 2.15 Unit V μC 110 A 3.32 mJ 16.2 μC 120 A 5.70 mJ 19.5 μC 123 A 7.13 mJ Diode-rectifier Characteristics TC=25oC unless otherwise noted Symbol VF IR Parameter Diode Forward Voltage Reverse Current Test Conditions Min. IF=100A,Tj=150oC Typ. 1.17 Tj=150oC,VR=1600V ©2016 STARPOWER Semiconductor Ltd. Max. V 2.0 2/5/2016 4/13 Unit mA SN0C GD100PIY120C6SN IGBT Module IGBT-brake Characteristics TC=25oC unless otherwise noted Symbol VCE(sat) VGE(th) ICES IGES RGint td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff ISC Parameter Collector to Emitter Saturation Voltage Gate-Emitter Threshold Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss SC Data Test Conditions IC=75A,VGE=15V, Tj=25oC IC=75A,VGE=15V, Tj=125oC IC=75A,VGE=15V, Tj=150oC IC=1.88mA,VCE=VGE, Tj=25oC VCE=VCES,VGE=0V, Tj=25oC VGE=VGES,VCE=0V, Tj=25oC Min. VCC=600V,IC=75A, RG=2.2Ω,VGE=±15V, Tj=25oC VCC=600V,IC=75A, RG=2.2Ω,VGE=±15V, Tj=125oC VCC=600V,IC=75A, RG=2.2Ω,VGE=±15V, Tj=150oC tP≤10μs,VGE=15V, Tj=150oC,VCC=900V, VCEM≤1200V ©2016 STARPOWER Semiconductor Ltd. 2/5/2016 Typ. Max. 1.70 2.15 1.95 Unit V 2.00 5.2 6.0 6.8 V 1.0 mA 100 nA 5.0 170 32 360 86 Ω ns ns ns ns 3.64 mJ 4.60 mJ 180 42 470 165 ns ns ns ns 7.80 mJ 7.00 mJ 181 43 480 186 ns ns ns ns 9.10 mJ 7.90 mJ 300 A 5/13 SN0C GD100PIY120C6SN IGBT Module Diode-brake Characteristics TC=25oC unless otherwise noted Symbol VF Qr IRM Erec Qr IRM Erec Qr IRM Erec Parameter Diode Forward Voltage Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Recovered Charge Peak Reverse Recovery Current Reverse Recovery Energy Test Conditions IF=35A,VGE=0V,Tj=25oC IF=35A,VGE=0V,Tj=125oC IF=35A,VGE=0V,Tj=150oC Min. VR=600V,IF=35A, -di/dt=1050A/μs,VGE=-15V Tj=25oC VR=600V,IF=35A, -di/dt=1050A/μs,VGE=-15V Tj=125oC VR=600V,IF=35A, -di/dt=1050A/μs,VGE=-15V Tj=150oC Typ. 2.00 1.90 1.88 1.9 Max. 2.45 Unit V μC 43 A 1.01 mJ 3.1 μC 51 A 2.37 mJ 3.5 μC 53 A 2.77 mJ NTC Characteristics TC=25oC unless otherwise noted Symbol R25 ∆R/R P25 Parameter Rated Resistance Deviation of R100 Power Dissipation B25/50 B-value B25/80 B-value B25/100 B-value Test Conditions Min. TC=100 oC,R100=493.3Ω R2=R25exp[B25/50(1/T21/(298.15K))] R2=R25exp[B25/80(1/T21/(298.15K))] R2=R25exp[B25/100(1/T21/(298.15K))] ©2016 STARPOWER Semiconductor Ltd. 2/5/2016 Typ. 5.0 -5 Max. 5 Unit kΩ % 20.0 mW 3375 K 3411 K 3433 K 6/13 SN0C GD100PIY120C6SN IGBT Module Module Characteristics TC=25oC unless otherwise noted Symbol LCE RCC’+EE’ RAA’+CC’ RthJC RthCH M G Parameter Min. Stray Inductance Module Lead Resistance,Terminal to Chip Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake-chopper) Junction-to-Case (per Diode-brake-chopper) Case-to-Heatsink (per IGBT-inverter) Case-to-Heatsink (per Diode-inverter) Case-to-Heatsink (per Diode-rectifier) Case-to-Heatsink (per IGBT-brake-chopper) Case-to-Heatsink (per Diode-brake-chopper) Case-to-Heatsink (per Module) Mounting Torque, Screw:M5 Weight of Module ©2016 STARPOWER Semiconductor Ltd. Typ. 40 4.00 3.00 Max. mΩ 0.293 0.505 0.571 0.347 1.068 0.123 0.212 0.240 0.146 0.449 0.009 3.0 2/5/2016 7/13 K/W K/W 6.0 300 Unit nH N.m g SN0C GD100PIY120C6SN IGBT Module 200 200 VGE=15V 175 150 150 125 125 IC [A] IC [A] 175 100 100 75 75 50 50 Tj=25℃ Tj=125℃ Tj=150℃ 25 VCE=20V Tj=25℃ Tj=125℃ Tj=150℃ 25 0 0 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 Fig 1. IGBT-inverter Output Characteristics 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig 2. IGBT-inverter Transfer Characteristics 25 35 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 30 Eon Tj=125℃ Eoff Tj=125℃ Eon Tj=150℃ Eoff Tj=150℃ 20 VCC=600V RG=1.6Ω VGE=±15V 20 15 E [mJ] E [mJ] 25 15 10 10 VCC=600V IC=100A VGE=±15V 5 5 0 0 0 50 100 IC [A] 150 200 Fig 3. IGBT-inverter Switching Loss vs. IC ©2016 STARPOWER Semiconductor Ltd. 0 4 8 RG [Ω] 12 16 Fig 4. IGBT-inverter Switching Loss vs. RG 2/5/2016 8/13 SN0C GD100PIY120C6SN IGBT Module 1 220 200 Module 180 IGBT 160 ZthJC [K/W] IC [A] 140 120 100 0.1 80 60 RG=1.6Ω VGE=±15V Tj=150oC 40 20 i: 1 2 3 4 ri[K/W]: 0.0176 0.0967 0.0937 0.0850 0.01 0.02 0.05 0.1 τi[s]: 0 0 350 700 VCE [V] 1050 0.01 0.001 1400 Fig 5. IGBT-inverter RBSOA 0.1 t [s] 1 10 Fig 6. IGBT-inverter Transient Thermal Impedance 200 9 Tj=25℃ Tj=125℃ Tj=150℃ 175 Erec Tj=125℃ 8 Erec Tj=150℃ 7 150 6 E [mJ] 125 IF [A] 0.01 100 75 5 4 3 50 VCC=600V RG=1.6Ω VGE=-15V 2 25 1 0 0 0 0.5 1 1.5 VF [V] 2 2.5 Fig 7. Diode-inverter Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 50 100 IF [A] 150 200 Fig 8. Diode-inverter Switching Loss vs. IF 2/5/2016 9/13 SN0C GD100PIY120C6SN IGBT Module 1 8 Erec Tj=125℃ 7 Diode Erec Tj=150℃ ZthJC [K/W] E [mJ] 6 5 4 0.1 3 VCC=600V IF=100A VGE=-15V 2 i: 1 2 3 4 ri[K/W]: 0.0303 0.1667 0.1616 0.1464 0.01 0.02 0.05 0.1 τi[s]: 1 0 4 8 RG [Ω] 12 0.01 0.001 16 Fig 9. Diode-inverter Switching Loss vs. RG 0.01 0.1 t [s] 1 10 Fig 10. Diode-inverter Transient Thermal Impedance 200 150 25℃ 180 VGE=15V 125℃ 125 160 140 100 IC [A] IF [A] 120 100 75 80 50 60 40 Tj=25℃ Tj=125℃ Tj=150℃ 25 20 0 0 0.5 0.7 0.9 1.1 1.3 VF [V] 1.5 1.7 Fig 11. Diode-rectifier Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 0.5 1 1.5 2 2.5 VCE [V] 3 3.5 Fig 12. IGBT-brake-chopper Output Characteristics 2/5/2016 10/13 SN0C GD100PIY120C6SN IGBT Module 100 70 Tj=25℃ Tj=125℃ Tj=150℃ 60 50 40 R [kΩ] IF [A] 10 30 1 20 10 0 0.1 0 0.5 1 1.5 2 VF [V] 2.5 3 Fig 13. Diode-brake-chopper Forward Characteristics ©2016 STARPOWER Semiconductor Ltd. 0 30 60 90 TC [oC] 120 Fig 14. NTC Temperature Characteristic 2/5/2016 11/13 SN0C 150 GD100PIY120C6SN IGBT Module Circuit Schematic Package Dimensions Dimensions in Millimeters ©2016 STARPOWER Semiconductor Ltd. 2/5/2016 12/13 SN0C GD100PIY120C6SN IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2016 STARPOWER Semiconductor Ltd. 2/5/2016 13/13 SN0C