FH30150D

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Trench Power MOSFET FH30150D Features Application  30V,150A  RDS(ON) =1.9mΩ (Typ.) @ VGS =10V  RDS(ON) =2.6mΩ (Typ.) @ VGS =4.5V  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Load Switch  PWM Application  Power management TO-252 D D FH30150 G ********** D G S S Schematic diagram TO-252 top view Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol VDSS V GSS ID I DM Value Units 30 ±20 V V TC = 25℃ 150 A TC = 100℃ 105 A 600 180 A mJ W Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 note2 E AS Single Pulsed Avalanche Energy PD R θJC Power Dissipation TC = 25℃ Thermal Resistance, Junction to Case 130 1.15 R θJA Thermal Resistance, Junc tion to Ambient 62 TJ , TSTG Operating and Storage Temperature Range www.xfhong.com 1/5 -55 to +175 ℃/W ℃ Ver1.0 N-Channel Trench Power MOSFET FH30150D Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 30 - - V VDS =30V, VGS = 0V, TJ=25℃ - - 1 VDS =24V, VGS = 0V, TJ=125℃ - - 10 VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.6 2.5 V Static Drain-Source on-Resistance VGS =10V, ID =30A - 1.9 2.6 note3 VGS =4.5V, ID =25A - 2.6 3.4 Forward Transconductance VDS =5V, ID =15A - 48 - S - 4800 - pF - 735 - pF - 420 - pF - 40 - nC - 6 - nC - 19 - nC - 20 - ns - 32 - ns - 75 - ns - 28 - ns Off Characteristic V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS=0V,ID=250μA uA On Characteristics VGS(th) RDS(on) gFS mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =25V, VGS =0V, f = 1.0MHz VDS =15V, ID =24A, VGS =4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, ID=1A, RGEN=1Ω, VGS =10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 150 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 600 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 49 85 ns - 18 35 nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS = 0V, IS=30A IS=1A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD=25V,VGS=10V, L=0.1mH, IAS=60A, RG=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% www.xfhong.com 2/5 Ver1.0 N-Channel Trench Power MOSFET FH30150D Typical Performance Characteristics Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.xfhong.com 3/5 Ver1.0 N-Channel Trench Power MOSFET FH30150D Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) www.xfhong.com 4/5 Ver1.0 N-Channel Trench Power MOSFET FH30150D Package Information : TO-252 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 4.830TYP. D2 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 2.900 TYP. L1 L2 1.400 L3 0.409 0.114 TYP. 1.700 0.055 0.067 0.063 TYP. 1.600 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V www.xfhong.com 5.350 TYP. 0.211 TYP. 5/5 Ver1.0