FH8712BG2

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD FH8712BG2 N - Channel Enhancement Mode Power MOSFET General Features Description ● VDS = 20V,ID = 7.8A The FH8712BG2 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with RDS(ON) < 13.5m Ω （MAX） @ VGS =4.5V gate voltages as low as 2.5V. This device is suitablefor use RDS(ON) < 14.5mΩ （MAX） as aload switch or in PWM applications. RDS(ON) < 16mΩ @ VGS =3.8V （MAX） @ VGS =2.5V Application ● High Power and current handing capability ● PWM application ● Lead free product is acquired ● Load switch ● Surface Mount Package G2 D1/D2 S2 S2 G1 S1 S1 ******* B Schematic diagram Pin 1 Marking andpin Assignment DFN2x3-6L Pin assignment and Top / Bottom View Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous(Note 1) Drain Current-Pulsed (Note 1,Note 3) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS Limit Unit 20 V VGS ID ±12 V 7.8 A IDM PD 30 A 1.5 W TJ,T STG -55 To 150 ℃ RθJA 89 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) www.xfhong.com 1/ 6 Ver1.0 FH8712BG2 N - Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit - V 1 μA Off Characteristics Drain-Source Breakdown Voltage BV DSS VGS =0V I D=250μA 20 Zero Gate Voltage Drain Current IDSS VDS =20V,VGS =0V - - Gate-Body Leakage Current I GSS VGS=±12V, VDS =0V - - ±100 nA VDS=VGS,I D=250μA 0.45 0.7 1.00 V VGS=4.5V, I D=5.0A - 11 13.5 mΩ VGS=3.8V, I D=5.0A - 12 14.5 mΩ VGS=2.5V, I D=4A - 13 16 mΩ VDS =5V,ID=7A - 20 - S - 1180 - PF - 205 - PF - 165 - PF - 8 - nS On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) RDS(ON) gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V,V GS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time t d(on) Turn-on Rise Time tr VDD=10V,R L=1.35Ω - 13 - nS t d(off) VGS=5V,R GEN=3Ω - 58 - nS - 16 - nS - 15 - nC - 0.8 - nC - 3.2 - nC - - 1.2 V - - 7 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Q gs Gate-Drain Charge Q gd VDS=10V,ID =7A, VGS =4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS =0V,IS=1A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2% . 4. Guaranteed by design, not subject to production www.xfhong.com 2/ 6 Ver1.0 FH8712BG2 N - Channel Enhancement Mode Power MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) Rdson On-Resistance(mΩ) Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) ID- Drain Current (A) Figure 6 Drain-Source On-Resistance ID- Drain Current (A) Normalized On-Resistance Figure 3 Power Dissipation TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.xfhong.com Figure 8 Drain-Source On-Resistance 3/ 6 Ver1.0 N - Channel Enhancement Mode Power MOSFET C Capacitance (pF) ID- Drain Current (A) FH8712BG2 Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 8 Capacitance vs Vds Rdson (mΩ) Is- Reverse Drain Current (A) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) 2 ID- Drain Current (A) 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ID=8A DC Operation in this area is limited by RDS(on). 10 0m s op era tio n 0.1 7 Ta=25°C 5 Single pulse 3 unted on ceramic substrate 2 When mo (900mm2✕0.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 Qg Gate Charge (nC) 5 7 10 2 3 5 Vds Drain-Source Voltage (V) Figure 11 Gate Charge www.xfhong.com PW≤10μs 10 0μ 1m s s 10 ms IDP=34A Figure 13 4/ 6 Safe Operation Area Ver1.0 N - Channel Enhancement Mode Power MOSFET r(t),Normalized Effective Transient Thermal Impedance FH8712BG2 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.xfhong.com 5/ 6 Ver1.0 FH8712BG2 N - Channel Enhancement Mode Power MOSFET Package Outline Dimensions ：DFN2X3-6L e D N6 k N4 L E E1 D1 N3 TOPVIEW b N1 A3 A A1 BOTTOMVIEW SIDEVIEW www.xfhong.com 6/ 6 Ver1.0