FH3510B

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD FH3510B N-Channel Enhancement Mode MOSFET Product Summary Features Parameter  SGT Trench Technology  Low RDS(ON) , Low Gate Charge V DS ID (@ VGS = 10V) (1) RDS(ON) (@ VGS = 10V) (Typ)  Fast Switching  Excellent Avalanche Characteristics RDS(ON) (@ VGS = 4.5V) (Typ)  100% UIS Tested, 100% Rg Tested  High Current Capability Typ. Unit 100 150 A 2.8 m 3.4 m V Application  Motor Control and Drive  Uninterruptible Power Supply (UPS)  Battery Management TO-263 B FH3510 ********** Schematic diagram TO-263 top view Marking and pin assignment Absolute Maximum Ratings (TC =25℃ unless otherwise specified) Symbol Parameter Max. Units V DSS Drain-Source Voltage 100 V V GSS Gate-Source Voltage ±20 V 150 A 95 465 A ID Continuous Drain Current Pulsed Drain Current Avalanche Current (3) (1) IDM I AS EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC RθJA TJ, TSTG (4) TC = 25℃ TC = 100℃ (2) 72 (3) TC = 25℃ Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range www.xfhong.com 1/6 A A 262 194 mJ 0.61 57 ℃/W -55 to +150 ℃ W ℃/W Ver1.0 FH3510B N-Channel Enhancement Mode MOSFET Electrical Characteristics (@ TJ = 25°C unless otherwise specified) Parameter Conditions Symbol Min. Typ. 100 105 Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS ID = 250A, VGS = 0V IDSS VDS = 80V, VGS = 0V TJ = 55°C IGSS VDS = 0V, VGS = ±20V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A Static Drain-Source ON-Resistance RDS(ON) VGS = 10V, ID = 20A Static Drain-Source ON-Resistance RDS(ON) Gate-Body Leakage Current 5.0 ±100 1.2 nA 2.5 V 2.8 3.4 m VGS = 4.5V, ID = 15A 3.4 4.3 m gFS VDS = 5V, ID = 20A 109 Diode Forward Voltage VSD IS = 1A, VGS = 0V 0.7 IS A 1.6 Forward Transconductance Diode Continuous Current V 1.0 TC = 25°C S 1.0 V 114 A DYNAMIC PARAMETERS (5) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VGS = 0V, VDS = 50V, f = 1MHz VGS = 0V, VDS= 0V, f = 1MHz 4646 pF 1214 pF 5.8 pF 2.3  78 nC 56 nC SWITCHING PARAMETERS (5) Total Gate Charge (@VGS = 10V) Qg Total Gate Charge (@VGS = 6.0V) Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime tD(on) Turn-On Rise Time tr Turn-Off DelayTime tD(off) VGS = 0 to 10V VDS = 50V, ID = 20A VGS = 10V, VDS = 50V RL = 2.5, RGEN = 6 11.2 nC 26 nC 10.0 ns 22 ns 84 ns 61 ns Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr IF = 20A, dIF/dt = 100A/s 84 ns Body Diode Reverse Recovery Charge Qrr IF = 20A, dIF/dt = 100A/s 216 nC Notes: 1. Computed continuous current assumes the condition of TJ_Max while the actual continuous current depends on the thermal & electro-mechanical application board design. 2. This single-pulse measurement was taken under TJ_Max = 150°C. 3. This single-pulse measurement was taken under the following condition [L = 0.1mH, VGS = 10V, VDS = 50V] while its value is limited by TJ_Max = 150°C. 4. The power dissipation PD is based on TJ_Max = 150°C. 5. This value is guaranteed by design hence it is not included in the production test. 6. Continuous current rating is limited by the package used. www.xfhong.com 2/6 Ver1.0 FH3510B N-Channel Enhancement Mode MOSFET Typical Electrical & Thermal Characteristics 150 120 VGS = 3.5V VGS = 3.7V VDS = 5.0V 24 VGS = 3.3V TJ = 125°C 90 ID (A) ID (A) 30 VGS = 10V VGS = 4.5V VGS = 4.0V VGS = 3.0V 60 TJ = 25°C 12 VGS = 2.7V 30 18 6 VGS = 2.5V 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS (V) VGS (V) Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics 6 3 5 2.5 4 Normalized RDS(ON) RDS(ON) (m) 0 VGS = 4.5V VGS = 10V 3 2 2 VGS = 10V ID = 20A 1.5 1 VGS = 4.5V ID = 15A 0.5 1 0 0 0 20 40 60 80 100 -25 0 25 50 75 100 125 ID (A) Temperature (C) Figure 3: RDS(ON) vs. Drain Current Figure 4: RDS(ON) vs. Junction Temperature 100 10000 150 Ciss Coss 10 Capacitance (pF) 1000 TJ = 125°C IS (A) -50 120 1 0.1 TJ = 25°C 100 10 0.01 Crss 1 0.001 0.0 www.xfhong.com 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 50 60 VSD (V) VDS (V) Figure 5: Body-Diode Characteristics Figure 6: Capacitance Characteristics 3/6 70 80 Ver1.0 FH3510B N-Channel Enhancement Mode MOSFET Typical Electrical & Thermal Characteristics 120 200 Power Dissipation, PD (W) 250 Current Rating, ID (A) 150 90 60 30 150 100 50 0 0 0 25 50 75 100 125 0 150 25 50 75 100 TCASE (C) TCASE (C) Figure 7: Current De-rating Figure 8: Power De-rating 1000.0 125 150 10 100 1000 1.0s 800 Limited by RDS(ON) 10s Power (W) 100.0 I D (A) 10.0 100s 1.0ms 1.0 600 400 10ms 0.1 T J_Max = 150 °C T C = 25°C 0.0 0.01 200 DC 0.1 1 10 100 1000 0 0.0001 0.001 0.01 Figure 9: Maximum Safe Operating Figure 10: Single Pulse Power Rating, Junction-to-Case R DS(O N) vs. VGS Gate Charge 10 V DS = 50V I D = 20A 16 8 12 6 V GS (V) RDS(ON) (m) 1 Pulse Width (s) 20 8 ID = 20A 4 2 4 0 0 2 www.xfhong.com 0.1 VDS (V) 4 6 V GS (V) 8 0 10 4/6 20 40 Qg (nC) 60 80 Ver1.0 FH3510B N-Channel Enhancement Mode MOSFET 10 Normalized Transient Thermal Resistance, ZJC (C/W) Duty Cycle = T on/T Peak T J = T C + PD x ZqJC x RqJC R qJC = 0.80°C /W 1 0.1 0.01 0.00001 Duty = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.xfhong.com 5/6 Ver1.0 FH3510B N-Channel Enhancement Mode MOSFET Package Information ：TO-263 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V www.xfhong.com 5.600 REF 0.220 REF 6/6 Ver1.0