FH3210B

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD FH3210B N-Channel Enhancement Mode MOSFET Features Applications • 100V/ 120A RDS(ON) = 6.8 mΩ (typ ) @ VGS =10V • Switching application • Power Management for Inverter Systems. . • 100% avalanche tested • Reliable and Rugged TO-263 ' * 6 Schematic diagram Marking and pin assignment TO-263 Top View Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC =25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current - 55 to 175 V °C °C TC=25°C 120 A TC=25°C 480** A TC=25°C 120 TC=100°C 84 TC=25°C 237 TC=100°C 119 Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation R θ JC Thermal Resistance- Junction to Case 0.63 R θ JA Thermal Resistance- Junction to Ambient 62.5 A W °C/W Avalanche Ratings E AS Avalanche Energy, Single Pulsed L=0.5mH 756*** mJ Note： * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=80V www.xfhong.com 1/7 Ver1.0 FH3210B N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC = 25°C Unless Otherwise Noted) Parameter Symbol FH3210 Test Conditions Unit Min. Typ. Max. VGS=0V, I DS=250µA 100 - - VDS=100V, VGS =0V - - 1 - - 10 2.0 3.0 4.0 V - - ±100 nA 6.8 8.5 mΩ 0.8 1 V Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON)* TJ =85°C Gate Threshold Voltage VDS=VGS, I DS=250µA Gate Leakage Current VGS=±25V, V DS=0V Drain Source On state Resistance VGS=10V, I DS=60A - - - V µA Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=60A, VGS =0V - ISD=60A, dlSD /dt=100A/µs Electrical Charact eristics (Cont.) Parameter Symbol - - 46 98 - - ns nC (TC = 25 °C Unless Otherwise Noted) FH3210 Test Conditions Unit Min. Typ. Max. Dynamic Characteristics RG Gate Resistance VGS =0V,VDS=0V,F=1MHz - 1.7 - Ciss Input Capacitance - 4922 - Coss Output Capacitance - 902 - Crss Reverse Transfer Capacitance VGS =0V, VDS=25V, Frequency=1.0MHz - 508 - td(ON) Turn-on Delay Time - 23 - Tr Turn on Rise Time td(OFF) Turn-off Delay Time Tf - VDD=50V, RG= 6 Ω, I DS =60A, VGS=10V, Turn-off Fall Time - 35 Ω pF - ns - 77 - - 44 - - 120 - - 17 - - 28 - Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=80V, V GS=10V, I DS =60A nC Note * : Pulse test ; pulse width≤300µs, duty cycle≤2%. . www.xfhong.com 2/7 Ver1.0 FH3210B N-Channel Enhancement Mode MOSFET Typical Operating Characteristics Drain Current Power Dissipation 280 135 120 ID - Drain Current (A) Ptot - Power (W) 240 200 160 120 80 40 limited by package 105 90 75 60 45 30 15 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ID - Drain Current (A) 600 100us Rd s(o n) Lim it 100 1ms 10ms 10 DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 S uare Wave Pulse Duration sec www.xfhong.com 3/7 Ver1.0 FH3210B N-Channel Enhancement Mode MOSFET Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 160 9.5 140 ID - Drain Current (A) 120 RDS(ON) - On - Resistance (mΩ) VGS= 6,7,8,9,10V 5.5V 100 5V 80 60 4.5V 40 20 0 8.5 VGS =10V 7.5 6.5 5.5 4.5 0 1 2 3 4 5 0 6 30 60 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 14 12 10 8 6 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.xfhong.com 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 150 IDS =250µA IDS=60A 4 120 VDS - Drain-Source Voltage (V) 16 4 90 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 4/7 Ver1.0 FH3210B N-Channel Enhancement Mode MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 160 2.4 VGS = 10V 2.2 100 IDS = 60A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 6.8mΩ 0 25 50 0.1 0.0 75 100 125 150 175 0.8 1.0 1.2 Capacitance Gate Charge 1.4 10 10000 VDS= 80V 9 VGS - Gate-source Voltage (V) 9000 C - Capacitance (pF) 0.6 VSD - Source-Drain Voltage (V) Frequency=1MHz 8000 7000 6000 Ciss 5000 4000 3000 2000 Coss 1000 0 5 IDS= 60A 8 7 6 5 4 3 2 1 Crss 10 15 20 25 30 35 0 40 VDS - Drain - Source Voltage (V) www.xfhong.com 0.4 Tj - Junction Temperature (°C) 11000 0 0.2 0 15 30 45 60 75 90 105 120 QG - Gate Charge (nC) 5/7 Ver1.0 FH3210B N-Channel Enhancement Mode MOSFET Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Avalanche Test Circuit and Waveforms VDS RD V DS DUT RG 90% VGS VDD 10% VGS tp td(on) tr www.xfhong.com 6/7 td(off) tf Ver1.0 FH3210B N-Channel Enhancement Mode MOSFET TO-263-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V www.xfhong.com 5.600 REF 0.220 REF 7/7 Ver1.0