FH8204

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET FH8204 Description General Features These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications. Application       20V/9.5A, RDS(ON) < 9mΩ @VGS =4.5V     Fast switching G-S ESD protection diode embeddedd Green Device Available DFN2x3package design MB/VGA/Vcore Portable Equipment Battery Powered System Load Switch LCD Display inverter Schematic diagram Marking and Pin Assignment DFN2x3-6L Pin assignment and Bottom View Absolute Maximum Ratings （T A =25˚C unless otherwise noted） Parameter Symbol Maximum Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 V Continuous Drain Current TA= 25˚C 1 ID TA = 70˚C 1 IDM Junction and Storage Temperature Range A 7.6 Pulse Drain Current 2 Maximum Power Dissipation 1 9.5 TA = 25˚C 60 A 1.56 PD TA = 70˚C W 1 TJ, TSTG - 55 to 150 Symbol Maximum O C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient 1 www.xfhong.com RθJA 1/5 80 Unit O C/W Ver1.0 N-Channel Enhancement Mode MOSFET FH8204 ELECTRICAL CHARACTERISTICS (Tj=25˚C Unless Otherwise Noted) Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0V, ID = 250μA 20 VGS = VDS, ID = 250μA 0.45 Typ. Max. Unit Static Parameters Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Forward Trans conductance Drain-Source On Resistance Diode Forward Voltage 2 gfs RDS(ON) VSD V VDS =0V,VGS =±12V V ±10 μA VDS = 16V, VGS = 0 V, Tj=25°C 1 VDS =16V,VGS =0V, Tj=55°C 5 VDS = 5V, ID = 5.5A VGS = 4.5V, ID = 5A 9 VGS = 4.0V, ID = 5A 9.5 VGS = 3.7V, ID = 5A 10 VGS = 3.1V, ID = 5A 11.2 VGS = 2.5V, ID = 5A 13.5 IS = 9.5A VGS =0V, Tj=25°C μA S 38 Maximum Body-Diode Continuous Current 1  1.5 mΩ 1.2 V 9.5 A Dynamic Parameters Input Cap. Ciss Output Cap. Coss Reverse Transfer Cap. Crss Total Gate Charge 1647 VDS = 10V, VGS = 0V, F = 1MHZ 170 pF 148 Qg 22 VDS = 15V, VGS = 4.5V, Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.2 Turn-On DelayTime TD(ON) 10 Turn-On Rise Time tr Turn-Off DelayTime TD(OFF) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr VGS =0V ,IS =1A, di/dt=100A/μs, nS Body Diode Reverse Recovery Charge Qrr TJ = 25 ˚C nC ID = 5.5A VDS =15V, VGS =4.5V , RG =6Ω, ID =5.5A 3.1 39.5 nC nS 65 30 Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t ≤10s. 2.The data tested by pulsed , pulse width ≦ 10us , duty cycle ≦ 1% www.xfhong.com 2/5 Ver1.0 FH8204 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERICTICS www.xfhong.com 3/5 Ver1.0 FH8204 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERICTICS www.xfhong.com 4/5 Ver1.0 FH3400B N-Channel Enhancement Mode MOSFET Package Outline Dimensions ：DFN2x3-6L e D N6 k N4 L E E1 D1 N3 TOPVIEW b N1 A3 A A1 BOTTOMVIEW SIDEVIEW www.xfhong.com 5/5 Ver1.0