N ⋏䚃໎ᕪර൪᭸ᓄᲦփ㇑
N-CHANNEL MOSFET
FHP10N65A/FHF10N65A
ѫ㾱৲ᮠ MAIN CHARACTERISTICS
ID
ӗ૱⢩ᙗ FEATURES
10A
վḵᶱ⭥㦧
Low gate charge
VDSS
650V
վ Crss (ިර٬ 18pF)
Low Crss (typical 18pF )
Rdson-typ˄@Vgs=10V˅
0.8Ω
ᔰޣ䙏ᓖᘛ
Fast switching
Qg-typ
29nC
100%㓿䗷䴚ፙ⍻䈅
100% avalanche tested
儈ᣇ dv/dt 㜭࣋
Improved dv/dt capability
RoHS ӗ૱
RoHS product
⭘䙄 APPLICATION
High efficiency switch
儈仁ᔰ⭥ޣⓀ
mode power supplies
⭥ᆀ䭷⍱ಘ
Electronic ballast
LED ⭥Ⓚ
LED power supply
ሱ㻵ᖒᔿ Package
ㅹ᭸⭥䐟 Equivalent Circuit
TO-220
TO-220F
FHP ㌫ࡇ
FHF ㌫ࡇ
㔍ሩᴰབྷ仍ᇊ٬ ABSOLUTE RATINGS (Tc=25ć)
亩ⴞ Parameter
ㅖਧ Symbol
ᮠ٬ Value
FHP10N65A
FHF10N65A
অս
Unit
VDS
650
V
ID˄TC=25ć˅
ID˄TC=100ć)
10*
6.2*
A
A
IDM
40*
A
VGS
±30
V
EAS
700
mJ
IAR
10
A
EAR
15.5
mJ
dv/dt
5.0
V/ns
ᴰ儈┿ᶱˉⓀᶱⴤ⍱⭥
Drain-Source Voltage
䘎㔝┿ᶱ⭥⍱*
Drain Current -continuous *
ᴰབྷ㜹ߢ┿ᶱ⭥⍱˄⌘ 1˅
Drain Current – pulse˄note 1˅
ᴰ儈ḵⓀ⭥
Gate-Source Voltage
অ㜹ߢ䴚ፙ㜭䟿˄⌘ 2˅
Single Pulsed Avalanche Energy˄note 2˅
䴚ፙ⭥⍱˄⌘ 1˅
Avalanche Current˄note 1˅
䟽༽䴚ፙ㜭䟿˄⌘ 1˅
Repetitive Avalanche Current˄note 1˅
Ҽᶱ㇑৽ੁᚒ༽ᴰབྷ⭥ਈॆ䙏⦷˄⌘ 3˅
Peak Diode Recovery dv/dt˄note 3˅
㙇ᮓ࣏⦷
Power Dissipation
ᴰ儈㔃৺ᆈۘᓖ
Operating and Storage Temperature Range
PD ˄TC=25ć˅
-Derate above 25ć
156
1.43
50
0.48
W
W/ć
TJˈTSTG
150ˈ–55 to 150
ć
TL
300
ć
ᕅ㓯ᴰ儈✺᧕ᓖ
Maximum Lead Temperature for Soldering Purposes
*┿ᶱ⭥⍱⭡ᴰ儈㔃䲀ࡦDrain current limited by maximum junction temperature
9HU
⭥⢩ᙗ ELECTRICAL CHARACTERISTICS
亩ⴞ
Parameter
ㅖਧ
Symbol
⍻䈅ᶑԦ
Tests conditions
ᴰሿ
Min
ިර
Typ
ᴰབྷ
Max
অս
Units
ID=250μA, VGS=0V
650
-
-
V
ID=250μA, referenced to 25ć
-
0.67
-
V/ć
VDS=650V,VGS=0V, TC=25ć
VDS=520V, TC=125ć
-
-
10
100
μA
μA
-
-
±100
μA
2.0
-
4.0
V
VGS =10V , ID=5A
-
0.75
0.9
Ω
VDS = 40V, ID=5.0A˄note 4˅
-
5.7
-
S
-
1350
-
-
150
-
-
10
-
-
23
-
ns
-
69
-
ns
-
144
-
ns
-
77
-
ns
-
29
-
nC
-
6.8
-
nC
-
10.3
-
nC
-
-
10
A
-
-
40
A
-
-
1.4
V
-
360
-
ns
-
3.3
-
μC
ޣᘱ⢩ᙗ Off –Characteristics
┿ˉⓀࠫク⭥ Drain-Source Voltage
ࠫク⭥ᓖ⢩ᙗ Breakdown Voltage
Temperature Coefficient
䴦ḵл┿ᶱ┿⭥⍱
Zero Gate Voltage Drain Current
ḵᶱփ┿⭥⍱
Gate-body leakage current
BVDSS
ΔBVDSS/Δ
TJ
IDSS
IGSS˄F/R˅ VDS=0V, VGS =±30V
-
䙊ᘱ⢩ᙗ On-Characteristics
䰸٬⭥
Gate Threshold Voltage
䶉ᘱሬ䙊⭥䱫
Static Drain-Source On-Resistance
↓ੁ䐘ሬ
Forward Transconductance
VGS(th)
RDS(ON)
gfs
VDS = VGS , ID=250μA
ࣘᘱ⢩ᙗ Dynamic Characteristics
䗃⭥ޕᇩ
Ciss
Input capacitance
VDS=25V,
䗃ࠪ⭥ᇩ
Coss
VGS =0V,
Output capacitance
f=1.0MHz
৽ੁՐ䗃⭥ᇩ
Crss
Reverse transfer capacitance
ᔰޣ⢩ᙗ Switching Characteristics
ᔦ䘏ᰦ䰤
td(on)
Turn-On delay time
VDS=325V,
кॷᰦ䰤
tr
ID=10A,
Turn-On rise time
RG=25Ω
ᔦ䘏ᰦ䰤
td(off)
˄note 4ˈ5˅
Turn-Off delay time
л䱽ᰦ䰤
tf
Turn-Off Fall time
ḵᶱ⭥㦧ᙫ䟿
Qg
Total Gate Charge
VDS =520V ,
ID=10A ,
ḵˉⓀ⭥㦧
Qgs
VGS =10V
Gate-Source charge
˄note 4ˈ5˅
ḵˉ┿⭥㦧
Qgd
Gate-Drain charge
┿ˉⓀҼᶱ㇑⢩ᙗ৺ᴰབྷ仍ᇊ٬ Drain-Source Diode Characteristics and Maximum Ratings
↓ੁᴰབྷ䘎㔝⭥⍱
Maximum Continuous Drain -Source
IS
Diode Forward Current
↓ੁᴰབྷ㜹ߢ⭥⍱
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
↓ੁ䱽
VSD
VGS=0V, IS=10A
Drain-Source Diode Forward Voltage
৽ੁᚒ༽ᰦ䰤
trr
VGS=0V,
Reverse recovery time
IS=10A ,dIF/dt=100A/μs (note
৽ੁᚒ༽⭥㦧
4)
Qrr
Reverse recovery charge
9HU
pF
✝⢩ᙗ THERMAL CHARACTERISTIC
亩ⴞ
Parameter
㔃ࡠ㇑༣Ⲵ✝䱫
Thermal Resistance, Junction to Case
㔃ࡠ⧟ຳⲴ✝䱫
Thermal Resistance, Junction to Ambient
ㅖਧ
অս
FHP10N65A
FHF10N65A
Rth(j-c)
0.8
2.5
ć/W
Rth(j-A)
62.5
62.5
ć/W
Symbol
Unit
⌘䟺˖
Notes:
1˖㜹ߢᇭᓖ⭡ᴰ儈㔃䲀ࡦ
2˖L=10mH, IAS=10A, VDD=48V, RG=25 Ω,䎧㔃 TJ=25ć
3˖ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS,䎧㔃 TJ=25ć
4˖㜹ߢ⍻䈅˖㜹ߢᇭᓖ ≤300μs,ঐオ∄≤2ˁ
5˖สᵜоᐕᓖᰐޣ
1˖Pulse width limited by maximum junction temperature
2˖L=10mH, ID=10A, VDD=48V, RG=25 Ω,Start TJ=25ć.
3˖ISD ≤10A,di/dt ≤300A/μs,VDD≤BVDSS, Starting TJ=25ć
4˖Pulse Test˖Pulse Width ≤300μs,Duty Cycle≤2ˁ
5˖Essentially independent of operating temperatur
9HU
⢩ᙗᴢ㓯
ELECTRICAL CHARACTERISTICS (curves)
9HU
⢩ᙗᴢ㓯
ELECTRICAL CHARACTERISTICS (curves)
9HU
ঠ䇠 Marking
⭏ӗᢩ⅑ԓ⸱
ASSEMMBLY
LOT CODE
伎㲩LOGO
FEIHONG LOGO
ӗ૱ԓ⸱
PRODUCT CODE
A
FHP10N65
ẓս
GRANDING CODE
ӗ૱රਧ
PART.NO
伎㲩LOGO
FEIHONG LOGO
ӗ૱ԓ⸱
PRODUCT CODE
⭏ӗᢩ⅑ԓ⸱
ASSEMMBLY
LOT CODE
A
)+)1
FHF10N65
ẓս
GRANDING
CODE
ӗ૱රਧ
PART.NO
9HU
ཆᖒቪረ˖
Package Dimension˖
TO-220
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˄Units˖PP˅
9HU
ཆᖒቪረ˖
Package Dimension˖
TO-220F
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˄UnitsPP˅
9HU
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