FH30150B

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Trench Power MOSFET FH30150B Features Application  30V,150A  RDS(ON) =1.8mΩ (Typ.) @ VGS =10V  RDS(ON) =2.4mΩ (Typ.) @ VGS =4.5V  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Load Switch  PWM Application  Power management TO-263 D B FH30150 ********** G S Schematic diagram Marking and pin assignment TO-263 top view Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol VDSS V GSS ID I DM Value Units 30 ±20 V V TC = 25℃ 150 A TC = 100℃ 105 A 600 180 A mJ W Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 note2 E AS Single Pulsed Avalanche Energy PD R θJC Power Dissipation TC = 25℃ Thermal Resistance, Junction to Case 150 1.0 R θJA Thermal Resistance, Junction to Ambient 62 TJ , TSTG Operating and Storage Temperature Range www.xfhong.com 1/5 -55 to +175 ℃/W ℃ Ver1.0 N-Channel Trench Power MOSFET FH30150B Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 30 - - V VDS =30V, VGS = 0V, TJ=25℃ - - 1 VDS =24V, VGS = 0V, TJ=125℃ - - 10 VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.6 2.5 V Static Drain-Source on-Resistance VGS =10V, ID =30A - 1.8 2.6 note3 VGS =4.5V, ID =25A - 2.4 3.4 Forward Transconductance VDS =5V, ID =15A - 48 - S - 4800 - pF - 735 - pF - 420 - pF - 40 - nC - 6 - nC - 19 - nC - 20 - ns - 32 - ns - 75 - ns - 28 - ns Off Characteristic V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current VGS=0V,ID=250μA uA On Characteristics VGS(th) RDS(on) gFS mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =25V, VGS =0V, f = 1.0MHz VDS =15V, ID =24A, VGS =4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS=15V, ID=1A, RGEN=1Ω, VGS =10V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 150 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 600 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 49 85 ns - 18 35 nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS = 0V, IS=30A IS=1A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD=25V,VGS=10V, L=0.1mH, IAS=60A, RG=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% www.xfhong.com 2/5 Ver1.0 N-Channel Trench Power MOSFET FH30150B Typical Performance Characteristics Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.xfhong.com 3/5 Ver1.0 N-Channel Trench Power MOSFET FH30150B Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) www.xfhong.com 4/5 Ver1.0 N-Channel Trench Power MOSFET FH30150B Package Information : TO-263 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V www.xfhong.com 5.600 REF 0.220 REF 5/5 Ver1.0