30P55K

富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. 30P55K (File No.：S&CIC1841) P-channel Enhancement Mode Power MOSFET Description Application Features  VDS = -30V, ID = -40A RDS(ON) < 11mΩ @ VGS = -10V RDS(ON) < 16mΩ @ VGS = -4.5V  Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired   TO-252(DPAK) top view    PWM Applications Load Switch Power Management 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin Assignment Schematic Diagram Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Unit s VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -40 A TC = 100℃ -26 A -134 A 98 mJ 24.8 W 4.9 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG www.superchip.cn note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range 第1页共6页 Version 1.1 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. 30P55K (File No.：S&CIC1841) P-channel Enhancement Mode Power MOSFET Electrical Characteristics (T J=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit s Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -30 - - V IDSS Zero Gate Voltage Drain Current VDS= -30V, VGS=0V - - -1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID= -250μA -1.0 -1.6 -2.5 V Static Drain-Source on-Resistance VGS= -10V, ID= -20A - 8.5 11 note3 VGS= -4.5V, ID= -10A - 12.0 16 - 3564 - pF - 416 - pF - 373 - pF - 37 - nC - 6.5 - nC - 9.4 - nC - 16 - ns - 21 - ns - 68 - ns - 52 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS= -15V, VGS=0V, f=1.0MHz VDS= -15V, ID= -20A, VGS= -10V Switching Characteristics td(on) tr td(off) tf Turn-on Delay Time Turn-on Rise Time VDD= -15V, ID= -20A, VGS= -10V, RGEN=2.5Ω Turn-off Delay Time Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -40 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -134 A V SD Drain to Source Diode Forward Voltage - -0.8 -1.2 V VGS=0V, IS= -30A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ= 25℃, VDD= -15V, VG= -10V, L= 0.5mH, RG= 25Ω, IAS= -20A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% www.superchip.cn 第2页共6页 Version 1.1 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. 30P55K (File No.：S&CIC1841) P-channel Enhancement Mode Power MOSFET Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 50 -ID (A) 50 10V 40 4.5V 30 25℃ 4V 30 10 10 VGS =1.5V 1 2 -VDS(V) 125℃ 20 20 3 4 5 Figure 3:On-resistance vs. Drain Current 0 0 0.5 1.0 1.5 -VGS(V) 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 16 TC=-55℃ 40 3V 0 0 -ID (A) -IS(A) 10 14 12 TJ=150℃ VGS =-4.5V 10 TJ=-50℃ TJ=-25℃ 1 8 VGS =-10V 6 4 -ID(A) 2 0 5 10 15 20 25 30 Figure 5: Gate Charge Characteristics 10 8 0.1 0.0 0.2 0.4 VSD(V) 0.6 0.8 1.0 105 VDS=-15V ID=-20A C(pF) 104 Ciss 6 103 Coss 4 Crss 102 2 www.superchip.cn 1.4 Figure 6: Capacitance Characteristics -VGS(V) 0 0 1.2 Qg(nC) 8 16 24 32 40 101 0 第3页共6页 -VDS(V) 5 10 15 20 25 30 Version 1.1 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. 30P55K (File No.：S&CIC1841) P-channel Enhancement Mode Power MOSFET Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature RDS(on） VBR(DSS) 1.3 1.2 1.1 1.0 0.9 0 -100 Tj (℃) -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area Figure 10: Maximum Continuous Drain Current vs. Case Temperature -ID(A) 10 49 3 -ID(A) 42 35 102 28 10μs 101 14 DC 100 10-1 21 100μs 1ms Limited by RDS(on) TC=25℃ Single pulse 0.01 0.1 7 -VDS (V) 1 10 100 0 0 25 50 Tc (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C (℃/W) 100 10-2 10-3 10-4 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 Notes: D=0.01 Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM *Z thJC +T C TP(s) PDM 10-1 10-3 www.superchip.cn 10-2 10-1 100 101 102 第4页共6页 Version 1.1 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. 30P55K (File No.：S&CIC1841) P-channel Enhancement Mode Power MOSFET Test Circuit www.superchip.cn 第5页共6页 Version 1.1 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. 30P55K (File No.：S&CIC1841) P-channel Enhancement Mode Power MOSFET TO-252 Package Information www.superchip.cn 第6页共6页 Version 1.1