FM1660

富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Features  Excellent insertion loss: 0.85dB @2.7GHz  P0.1dB @ 36dBm  Multi-Band operation 700MHz to 2700MHz The FM1660 is a low loss, high isolation high power  RFFE 2.0 control interface SP10T switch for antenna transmitting and receiving.  Compact 2.4mm x 2.4mm in QFN-20 package The FM1660 is compatible with MIPI 2.0 control, which  No DC blocking capacitors required（unless is a key requirement for many cellular transceivers. external DC is applied to the RF ports） This part is packaged in a compact 2.4mm x 2.4mm, Description 20-pin, QFN package which allows for a small solution Applications size with no need for external DC blocking capacitors  2G/3G/4G antenna transmitting and receiving  Cellular modems and USB Devices (when no external DC is applied to the device ports). Figure 1. FM1660 Functional Block Diagram and Pinout(Top View) Version 1.1 Page 1 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Application Circuit Figure 2. FM1660 Evaluation Board Schematic Table 1 Pin Descriptions Pin No. Name Description Pin No. Name Description 1 NC Not Connect 11 RF5 RF port5 2 RF10 RF port10 12 RF4 RF port4 3 RF9 RF port 9 13 RF3 RF port3 4 RF8 RF port8 14 RF2 RF port2 5 RF7 RF port7 15 RF1 RF port1 6 RF6 RF port6 16 GND Ground 7 GND Ground 17 VDD Power supply 8 GND Ground 18 VIO Supply voltage for MIPI 9 ANT Antenna port 19 SDATA MIPI data input/output 10 GND Ground 20 SCLK MIPI clock GND Ground Ground Paddle Notice：Bottom ground paddles must be connected to ground. Version 1.1 Page 2 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Truth Table Table 2 Truth Table State Mode 1 Register_0 D7 D6 D5 D4 D3 D2 D1 D0 ISO x 0 0 0 0 0 0 0 2 RF1 on x 0 0 0 0 0 1 0 3 RF2 on x 0 0 0 1 0 1 0 4 RF3 on x 0 0 0 1 1 1 0 5 RF4 on x 0 0 0 1 0 1 1 6 RF5 on x 0 0 0 0 0 0 1 7 RF6 on x 0 0 0 1 0 0 1 8 RF7 on x 0 0 0 0 1 1 0 9 RF8 on x 0 0 0 0 1 0 0 10 RF9 on x 0 0 0 1 1 0 0 11 RF10 on x 0 0 0 1 0 0 0 Absolute Maximum Ratings Table 3 Absolute Maximum ratings Parameters Symbol Minimum Maximum Units Supply voltage VDD +2.5 +4.8 V Supply voltage for MIPI VIO +1.4 +2.0 V VCTL 0 +2.0 V +36 dBm MIPI Control voltage (SDATA, SCLK) RF input power (RF1 to PIN RF10) Operating temperature TOP –20 +85 ℃ Storage temperature TSTG –40 +125 ℃ ESD_HBM 1000 V ESD_CDM 1000 V Human body model (HBM), Class 1C Charged device model (CDM), Class III Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device Version 1.1 Page 3 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Electrical Specifications Table 4 Electrical Specifications Parameter DC Specifications Symbol Supply voltage VDD Supply current IDD VIO supply voltage VIO VIO Supply current IIO SDATA, SCLK control voltage: High Low Test Condition Min Typical Max Units 2.5 2.8 4.2 V 80 100 uA 1.8 1.95 V 5 10 uA 1.65 VCTL_H 0.8* VIO VIO 1.95 V VCTL_L 0 0 0.3 V 2 5 uS From 50% of final VCTL Switching Speed voltage to 10%/90% of final RF power RF Specifications Insertion loss (ANT pin to RF1/2/3/4/5/6/7/8/9/10 pins) Isolation (ANT pin to RF1/2/3/4/5/6/7/8/9/10 pins) 0.1 dB Compression Point (ANT pin to RF1/2/3/4/5/6/7/8/9/10 pins) 2nd Harmonic 3rd Harmonic Version 1.1 IL Iso P0.1dB 2F0 3F0 0.1 to 1.0 GHz 0.55 1.0 to 2.0 GHz 0.70 2.0 to 2.7 GHz 0.85 0.1 to 1.0 GHz 30 35 1.0 to 2.0 GHz 20 25 2.0 to 2.7 GHz 19 21 dB dB 0.7 GHz to 3.0 GHz +36 F0=900MHz @ 35dBm -50 -45 F0=900MHz @ 26dBm -65 -60 F0=900MHz @ 35dBm -45 -40 F0=900MHz @ 26dBm -70 -65 Page 4 dBm dBm Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX MIPI Read and Write Timing MIPI supports the following Command Sequences: • Register Write • Register_0 Write • Register Read Figures 3 and 4 provide the timing diagrams for register write commands and read commands, respectively. Figure 5 shows the Register 0 Write Command Sequence. Refer to the MIPI Alliance Specification for RF Front-End Control Interface (RFFE), v1.10 (26 July 2011) for additional information on MIPI USID programming sequences and MIPI bus specifications. Figure 4 Register Write Command Sequence Version 1.1 Page 5 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Figure 5 Register Read Command Sequence In the timing figures, SA[3:0] is slave address. A[4:0] is register address. D[7:0] is data. “P” is odd parity bit. Version 1.1 Page 6 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Register 0 Write Command Sequence Figure shows the Register 0 Write Command Sequence. The Command Sequence starts with an SSC, followed by the Register 0 Write Command Frame containing the Slave address, a logic one, and a seven bit word to be written to Register 0. The Command Sequence ends with a Bus Park Cycle. Figure 6 Register 0 Write Command Sequence Version 1.1 Page 7 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Register definition Table 5 Register definition table Register Address Register Name 0x00 REGISTER_0 0x001B GROUP_SID 0x001C PM_TRIG Data Bits R/W Function 7:0 R/W RF Control 7:4 R RESERVED 3:0 R/W GSID 7:6 R/W Description Register_0 truth Table: Table 2 Group Slave ID PWR_MODE 00: Normal Operation (ACTIVE) BROADC AST_ID Trigger support support Default 0x00 No Yes 0x0 No No 0x0 No No 0b10 Yes No 01: Reset all registers to default settings (STARTUP) 10: Low power (LOW POWER) 11: Reserved Note: Write PWR_MODE=2’h1 will reset all register, and puts the device into STARTUP state. 5 R/W Trigger_Mask_2 If this bit is set, trigger 2 is disabled 0 No No 4 R/W Trigger_Mask_1 If this bit is set, trigger 1 is disabled 0 No No 3 R/W Trigger_Mask_0 If this bit is set, trigger 0 is disabled 0 No No 0 Yes No 0 Yes No 0 Yes No 0x45 No No 0x78 No No 0x4 No No 0xA No No Note: When all triggers are disabled, writing to a register that is associated with trigger 0, 1, or 2, causes the data to go directly to the destination register. 2 W A write of a one to this bit loads trigger Trigger_2 2's registers 1 W A write of a one to this bit loads trigger 1's Trigger_1 registers 0 W Trigger_0 A write of a one to this bit loads trigger 0's registers Note: Trigger processed immediately then cleared. Trigger 0, 1, and 2 will always read as 0. 0x001D 0x001E PRODUCT_ID MANUFACTU 7:0 7:0 R PRODUCT_ID Product Number R MANUFACTUR Lower eight bits of MIPI registered ER_ID[7:0] Manufacturer ID MANUFACTUR Upper two bits of MIPI registered ER_ID[9:8] Manufacturer ID USID USID of the device. RER_ID 7:4 0x001F R MAN_USID 3:0 Version 1.1 R/W Page 8 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Power ON and OFF sequence Here is the recommendation about power-on/off sequence in order to avoid damaging the device. Power ON 1) Apply voltage supply - VDD 2) Apply logic supply - VIO 3) Wait 10μs or greater and then apply MIPI bus signals – SCLK and SDATA 4) Wait 5μs or greater after MIPI bus goes idle and then apply the RF Signal Power OFF 1) Remove the RF Signal 2) Remove MIPI bus – SCLK and SDATA 3) Remove logic supply - VIO 4) Remove voltage supply – VDD Note: VIO can be applied to the device before VDD or removed after VDD. It is important to wait 10μs after VIO & VDD are applied before sending SDATA to ensure correction data transmission. The minimum time between a power up and power down sequence (and vice versa) is ≥ 100us. Version 1.1 Page 9 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1660文件编号：S&CIC2061) High power SP10T Switch with MIPI for TX/RX Reflow Chart Figure 5 Recommended Lead-Free Reflow Profile Table 6 Reflow Chart Parameters Reflow Profile Parameter Preheat Temperature(TSMIN to TSMAX) 150℃ to 200℃ Preheat Time(ts) 60 to 180 Seconds Ramp-Up Rate(TSMAX to TP) 3℃/s MAX Time Above TL 217℃(tL) 60 to 150 Seconds Peak Temperature（TP） 260℃ Time within 5℃ of Peak Temperature(tP) 20 to 40 Seconds Ramp-Down Rate(TSMAX to TP) 6℃/s MAX Time for 25℃ to Peak Temperature(t25-TP) 8 Minutes MAX ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be applied when devices are operating. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and is considered RoHS compliant. Version 1.1 Page 10 Copyright©2021, ShenZhen FM Co.ltd