40S13

富满微电子集团股份有限公司 40S13(文件编号：S&CIC2019) FINE MADE MICROELECTRONICS GROUP CO., LTD. N-Channel Trench Power MOSFET Description Features Application  40V,18A  RDS(ON)=15mΩ (Typ.) @VGS=10V  DC/DC Converters  Wireless charger RDS(ON)=20mΩ (Typ.) @ VGS = 4.5V  High Density Cell Design for Ultra Low RDS(ON)  Lead Free and Green Devices Available (RoHS Compliant)  Excellent Package for Good Heat Dissipation  Synchronous rectification Package 45N18 40S13 SOP-8 Marking and pin Assignment Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 18 A TC = 100℃ 10 A ID Continuous Drain Current IDM Pulsed Drain Current note1 68 A EAS Single Pulsed Avalanche Energy note2 14 mJ PD Power Dissipation 19 W ℃/W ℃ RθJC TJ, TSTG TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range www.superchip.cn 第1页共6页 4.62 -55 to +175 Version 1.0 富满微电子集团股份有限公司 40S13(文件编号：S&CIC2019) FINE MADE MICROELECTRONICS GROUP CO., LTD. N-Channel Trench Power MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 40 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA IDSS Zero Gate Voltage Drain Current VDS =40V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source on-Resistance VGS =10V, ID =10A - 15 20 note3 VGS =4.5V, ID =8A - 20 25 - 588 - pF - 112 - pF - 64 - pF - 13.6 - nC - 3.5 - nC - 6.4 - nC - 5.8 - ns - 11.7 - ns - 15 - ns - 5.2 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = 20V, VGS =0V, f = 1.0MHz VDS =20V, ID =20A, VGS =10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf V DD=20V, ID =20A, RL=1Ω, RGEN=3Ω, VGS =10V Turn-off Fall Time Drain-Source Diode Characteristics and MaximumRatings IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 68 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 9.5 - ns - 15.2 - nC VGS =0V, IS=20A trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge TJ=25℃, IF=20A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃,VDD=30V,VG=10V, RG=25Ω，L=0.5mH 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% www.superchip.cn 第2页共6页 Version 1.0 富满微电子集团股份有限公司 40S13(文件编号：S&CIC2019) www.superchip.cn FINE MADE MICROELECTRONICS GROUP CO., LTD. N-Channel Trench Power MOSFET 第3页共6页 Version 1.0 富满微电子集团股份有限公司 40S13(文件编号：S&CIC2019) FINE MADE MICROELECTRONICS GROUP CO., LTD. N-Channel Trench Power MOSFET Safe Operation Area Thermal Transient Impedance www.superchip.cn 第4页共6页 Version 1.0 富满微电子集团股份有限公司 40S13(文件编号：S&CIC2019) Test Circuit FINE MADE MICROELECTRONICS GROUP CO., LTD. N-Channel Trench Power MOSFET Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.superchip.cn 第5页共6页 Version 1.0 富满微电子集团股份有限公司 40S13(文件编号：S&CIC2019) FINE MADE MICROELECTRONICS GROUP CO., LTD. N-Channel Trench Power MOSFET SOP-8 Package Information 符号 A A1 A2 A3 b c D E E1 e L L1 θ www.superchip.cn 毫米 典型值 1.50 0.10 1.40 0.60 0.40 0.22 4.90 6.00 3.90 1.27BSC 0.65 1.05BSC 4º 最小值 1.35 0.55 0.35 0.17 4.85 5.90 3.80 0.60 0º 第6页共6页 最大值 1.55 0.15 1.45 0.65 0.45 0.25 4.95 6.10 4.00 0.70 6º Version 1.0