2060A(N MOS)

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 2060A（文件编号：S&CIC1744） N-Channel Trench Power MOSFET General Description The 2060A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications. Features TO-252(DPAK) Top View ● VDS=20V；ID=60A； RDS(ON)