FM1022

富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1022 (文件编号：S&CIC2057) 619 to 5925 MHz DPDT SWITCH Features Description  Broadband frequency range: 619 to 5925MHz  GPIO interface (SOI) double-pole, double-throw (DPDT) switch.  RoHS compliant package The switch provides high linearity performance,  Compact 1.1mm x 1.5mm x 0.45mm QFN low insertion loss and high isolation. 10-pin package, MSL1   Applications  The FM1022 is a CMOS, Silicon-On-Insulator Switching is controlled by one control voltage pin, VCTL. Depending on the logic voltage level 2G/3G/4G/5G antenna swapping applied to this pin, the RF1 and RF2 pins connect to one of the two other RF3 and RF4 pins through a low insertion loss path, while maintaining a high isolation path to the alternate port, ANT. No external DC blocking capacitors are required on the RF path as long as no DC voltage is applied externally.  The FM1022 DPDT switch is provided in a QFN 10- pin, 1.1mm x 1.5mm x 0.45mm package. The functional block diagram and the pin configuration are shown in Figure 1. Signal pin assignments and functional pin descriptions are provided in Table 1. Figure 1. Functional Block and Pin Diagram Version 1.1 Page 1 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1022 (文件编号：S&CIC2057) 619 to 5925 MHz DPDT SWITCH V1.1 Function Characteristics Figure 2. Application Circuit Table 1. Pin Descriptions No. Name Description No. Name Description 1 GND Ground 6 RF2 RF Port2 2 RF3 RF Port3 7 GND Ground 3 GND Ground 8 RF4 RF Port4 4 RF1 RF Port1 9 VCTL Control Voltage Pin 5 GND Ground 10 VDD DC Power Supply Table 2. VCTL Truth Table for RF Channel Operating Modes VCTL RF Channel Operating Mode Low RF1 to RF3 On, RF2 to RF4 On High RF1 to RF4 On, RF2 to RF3 On Version 1.1 Page 2 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1022 (文件编号：S&CIC2057) 619 to 5925 MHz DPDT SWITCH V1.1 Electrical Characteristics Table 3. Absolute Maximum Ratings Parameter Symbol Min Max Unit Condition DC Supply Voltage VDD 1.6 4.2 V TA=25℃ Control Pin Voltage VCTL 1.6 3.0 V TA=25℃ Max RF Input Power PINMAX 37 dBm 20% DC, VSWR=1:1, TA=25°C Humidity Grade Level MSL Device Operating Temperature TOP -30 85 ℃ Device Storage Temperature TSTG -40 125 ℃ VESD(HBM) 1000 V Human Body Model VESD(CDM) 500 V Charged Device Model Electrostatic Discharge(All Pins) MSL1 NOTICE: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Table 4. Recommended Operating Conditions Parameter Symbol MIN TYP MAX Unit 5925 MHz F0 617 VDD 2.40 2.85 3.60 V Control Voltage High VCTLH 1.35 1.80 2.70 V Control Voltage Low VCTLL 0 0 0.3 V Operating Frequency DC Supply Voltage Version 1.1 Page 3 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1022 (文件编号：S&CIC2057) 619 to 5925 MHz DPDT SWITCH V1.1 Table 5. Nominal Operating Parameters Specification Parameter Normal Condition Symbol MIN TYP MAX Unit Condition VDD=2.85V, VCTLH=1.8V, VCTLL=0V, PIN=0dBm, ZO=50Ω, TA=25℃, Unless Otherwise Stated DC Characteristics VDD Supply Voltage VDD VDD Supply Current IDD Control Logic Voltage VCTLH 2.40 1.35 2.85 3.60 V 90 200 μA 1.80 2.70 V Control Current ICTL 5 8 μA Switch Time TSW 2.0 3.0 μs 50% VCTL to 90% of RF Turn On Time TON 10 20 μs 50% VDD to 90% RF RF Characteristics Insertion Loss IL Isolation (One Port On, Another Port ISO Off) Harmonics Version 1.1 0.45 0.55 dB F0=617 to 960MHz 0.50 0.55 dB F0=960 to 2170MHz 0.55 0.65 dB F0=2170 to 2700MHz 0.75 0.85 dB F0=3300 to 3800MHz 0.80 0.90 dB F0=3800 to 4200MHz 0.90 1.00 dB F0=4400 to 5000MHz 1.10 1.40 dB F0=5150 to 5925MHz 35 40 dB F0=617 to 960MHz 30 34 dB F0=960 to 2170MHz 31 33 dB F0=2170 to 2700MHz 30 32 dB F0=3300 to 3800MHz 29 31 dB F0=3800 to 4200MHz 28 30 dB F0=4400 to 5000MHz 20 28 dB F0=5150 to 5925MHz 2F0 -58 -48 dBm F0=850/900MHz@35dBm 3F0 -55 -55 dBm F0=850/900MHz@35dBm 2F0 -65 -55 dBm F0=1800/1900MHz@33dBm 3F0 -55 -50 dBm F0=1800/1900MHz@33dBm 2F0 -70 -65 dBm F0=617 to 2700MHz@26dBm Page 4 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1022 (文件编号：S&CIC2057) 619 to 5925 MHz DPDT SWITCH V1.1 3F0 -80 -65 dBm F0=617 to 2700MHz@26dBm 2F0 -75 -60 dBm F0=3300 to 3800MHz@26dBm 3F0 -80 -65 dBm F0=3300 to 3800MHz@26dBm Marking Specifications Figure 3. Marking Specifications (Top View) Tape and Reel Dimensions Figure 4. Tape and Reel Dimensions Version 1.1 Page 5 Copyright©2021, ShenZhen FM Co.ltd 富满微电子集团股份有限公司 FINE MADE MICROELECTRONICS GROUP CO., LTD. FM1022 (文件编号：S&CIC2057) 619 to 5925 MHz DPDT SWITCH V1.1 Table 6. Reflow Chart Parameters Reflow Profile Parameter Preheat Temperature(TSMIN to TSMAX) 150℃ to 200℃ Preheat Time(ts) 60 to 180 Seconds Ramp-Up Rate(TSMAX to TP) 3℃/s MAX Time Above TL 217℃(tL) 60 to 150 Seconds Peak Temperature（TP） 260℃ Time within 5℃ of Peak Temperature(tP) 20 to 40 Seconds Ramp-Down Rate(TSMAX to TP) 6℃/s MAX Time for 25℃ to Peak Temperature(t25-TP) 8 Minutes MAX ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be applied when devices are operating. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and is considered RoHS compliant. Version 1.1 Page 6 Copyright©2021, ShenZhen FM Co.ltd