3060K

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3060K（文件编号：S&CIC1695） N-Channel Trench Power MOSFET General Description The 3060K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features ● VDS = 30V,ID =60A RDS(ON) < 7mΩ @ VGS =10V RDS(ON) < 12mΩ 3060K @ VGS =5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ● ● ● PWM applications Load switch Power management 100% UIS TESTED! 100% ΔVds TESTED! TO-252(DPAK) top view Package Marking and Ordering Information Device Marking 3060K Table 1. Device 3060K Device Package Reel Size Tape width Quantity TO-252 325mm 16mm 2500 Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 30 V ±20 V Drain Current-Continuous(Tc=25℃) (Note 1) 60 A Drain Current-Continuous(Tc=100℃) 38 A 250 A Maximum Power Dissipation(Tc=25℃) 65 W Maximum Power Dissipation(Tc=100℃) 33 W 120 mJ -55 To 175 ℃ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS TJ,TSTG www.superchip.cn Drain Current-Continuous@ Current-Pulsed (Note 2) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range 第 1 页 共 6 页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3060K（文件编号：S&CIC1695） Table 2. Thermal Characteristic Symbol RJC Table 3. N-Channel Trench Power MOSFET Parameter Typ Max Unit - 2.3 ℃/W Thermal Resistance,Junction-to-Case Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS =0V ±100 nA 2.5 V VGS(th) Gate Threshold Voltage gFS RDS VDS=VGS,ID=250μA Forward Transconductance Drain-Source On-State Resistance (ON) 30 1.0 V 1.5 VDS=5V,ID=20A 20 VGS=10V, ID=20A(Tc=25℃) 5.5 7.0 mΩ 7.3 11 mΩ 7.8 12 mΩ VGS=10V, ID=20A (Tc=125℃) VGS=5V, ID=15A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=15V,VGS= 0V, VGS=0V, VDS=0V,f=1.0MHz 1450 pF 230 pF 185 pF 1.7 Ω 9 nS 26 nS Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=10V, Turn-Off Delay Time VDS=15V, 35 nS tf Turn-Off Fall Time RL=0.75,RGEN= 8 nS Qg Total Gate Charge 35 nC Qgs Gate-Source Charge 6 nC Q gd Gate-Drain Charge 12 nC VGS=10V, VDS=25V, ID=14A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A 60 A 1.2 V Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=15V,VG=10V, RG=25Ω www.superchip.cn 第 2 页 共 6 页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3060K（文件编号：S&CIC1695） N-Channel Trench Power MOSFET Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： www.superchip.cn 第 3 页 共 6 页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3060K（文件编号：S&CIC1695） N-Channel Trench Power MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature TJ-Junction Temperature(℃) Figure 4. Drain Current TJ-Junction Temperature(℃) Figure 6. RDS(ON) vs Junction Temperature Normalized Vth Normalized Rdson Figure 5. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) www.superchip.cn TJ-Junction Temperature(℃) 第 4 页 共 6 页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3060K（文件编号：S&CIC1695） N-Channel Trench Power MOSFET Figure 8. Capacitance Vgs (V) C Capacitance(pF) Figure 7. Gate Charge Waveforms Qg(nC) VDS Drain-to-Source Voltage(V) Figure 9. Body-Diode Characteristics Vsd(V) Figure 10. Maximum Safe Operating Area VDS Drain-to-Source Voltage(V) Figure 11. Normalized Maximum Transient Thermal Impedance www.superchip.cn 第 5 页 共 6 页 Version 1.0 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 3060K（文件编号：S&CIC1695） N-Channel Trench Power MOSFET TO-252 Package Information www.superchip.cn 第 6 页 共 6 页 Version 1.0