6080D

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080D (文件编号：S&CIC1740) 68V N-channel enhancement mode MOSFET Features General Description  Extremely Low RDS(on): The 6080D uses advanced trench Typ.RDS(on) = 7.0mΩ @VGS=10 V,Id=40 A Technology and design to provide excellent  Low gate charge ( typical 75 nC) RDS(ON) with low gate charge. It can  be use in a wide variety of applications. Fast switching  100% avalanche tested Package 6080D Marking and pin assignment TO-263top view Schematic diagram Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage Drain Current - Continuous (TC= 25°C) - Continuous (TC= 70°C) ID Value Units 60 V 80 A 64* A IDM Drain Current - Pulsed (Note 1) 280* A VGS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 405 mJ EAR Repetive Avalanche Energy (Note 1) 46 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns 128 W 1.2 W/°C PD Power Dissipation (TC = 25°C) - Derate above 25°C Tj ,Tstg Operating and Storage Temperature Range Maximum lead temperature for soldering,purpose, 1/8 from case for 5 seconds T -55 to +150 300 oC o C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol R θJC R θJA Parameter Value Units Thermal Resistance, Junction-to-Case 0.56 °C/W Thermal Resistance, Junction-to-Ambient 58.7 °C/W www.superchip.cn 第 1 页 共 7 页 Version 1.0 Aug 2019 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080D (文件编号：S&CIC1740) 68V N-channel enhancement mode MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS △BVDSS /△Tj I I I DSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA Breakdown Voltage Temperature ID= 250 μA, Referenced Coefficient to 25°C Zero Gate Voltage Drain Current 68 V 58 mV/°C VDS = 68 V, VGS = 0 V 1 μA VDS = 54 V, TC = 125°C 10 μA GSSF Gate Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA GSSR Gate Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA 3 4 V 9.2 mΩ On Characteristics VGS(TH) Gate Threshold voltage VDS = VGS, ID = 250 uA RDS(On) Drain-Source on-state resistance VGS = 10 V, ID = 40 A 7.0 VDS = 10 V, ID 34.0 S 3899 pF 321 pF 303 pF 20 ns 52 ns 49 ns 23 ns gFS Forward Transconductance = 40 A(Note 3) 2 Dynamic Characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) tr Turn On Delay Time Rising Time tf Fall Time VDD = 35 V, ID = 40 A, VGS = 10 V, RG = 4.7 Ω (Note 3, 4) Qg Total Gate Charge VDS = 35 V, ID = 40 A, 75 nC Qgs Gate-Source Charge VGS = 10 V 26 nC Qgd Gate-Drain Charge (Note 3, 4) 20 nC Gate Resistance VDS = 0 V, Scan F mode 2.0 Ω td(off) Rg Turn Off Delay Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 80 A ISM Maximum Pulsed Drain-Source Diode Forward Current 280 A VSD Diode Forward Voltage 1.2 V Irrm Reverse recovery current Trr Reverse recovery time Qrr Reverse recovery charge VGS= 0 V, IS = 40 A IS= 40A, VGS = 0V, dIF/dt = 100A/us -1.4 A 23 ns 16 nC Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.95 mH, IAS = 32 A, VDD = 10V, RG = 25 Ω, Starting Tj = 25°C 3. ISD ≤ 40A, di/dt = 100A/us, VDD ≤ BVDSS, Staring Tj =25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% www.superchip.cn 5. Essentially independent of operating temperature 第 2 页 共 7 页 Version 1.0 Aug 2019 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080D (文件编号：S&CIC1740) 68V N-channel enhancement mode MOSFET Typical Characteristics Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs Figure 4. On-Resistance vs. Gate to Drain Current and Gate Voltage Figure 5. Capacitance Characteristics www.superchip.cn Figure 2. Transfer Characteristics 第 3 页 共 7 页 Source Voltage Figure 6. Gate Charge Characteristics Version 1.0 Aug 2019 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080D (文件编号：S&CIC1740) 68V N-channel enhancement mode MOSFET Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs Temperature vs Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 11. Body Diode Forward Voltage Figure 12 . Power Dissipation vs Junction Vs Reverse Drain Current www.superchip.cn 第 4 页 共 7 页 Temperature Version 1.0 Aug 2019 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080D (文件编号：S&CIC1740) 68V N-channel enhancement mode MOSFET Figure 13. Transient Thermal Response Curve Test Circuit Figure 14. Gate charge test circuit & waveform Figure 15. Switching time test circuit & waveform www.superchip.cn 第 5 页 共 7 页 Version 1.0 Aug 2019 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080D (文件编号：S&CIC1740) 68V N-channel enhancement mode MOSFET Figure 16. Unclamped Inductive switching test circuit & waveform Figure 17. Peak diode recovery dv/dt test circuit & waveform www.superchip.cn 第 6 页 共 7 页 Version 1.0 Aug 2019 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080D (文件编号：S&CIC1740) 68V N-channel enhancement mode MOSFET TO-263 Package Information www.superchip.cn 第 7 页 共 7 页 Version 1.0 Aug 2019