FX2N7002KMEH-06S3G

FX2N7002KMEH-06S3 60V N-Channel MOSFET Features ￭ RDS(ON)≦3Ω@VGS=10V ￭ RDS(ON)≦3.2Ω@VGS=4.5V ■ High Density Cell Design For Ultra Low On-Resistance ■ Very Low Leakage Current In Off Condition ■ ESD Protected 2KV HBM ■ AEC-Q101 qualified Ordering Information Part Name FX2N7002KMEH-06S3 FX2N7002KMEH-06S3G FX2N7002KMEH-06S3Q BVDSS RDS(ON) ID 60 V 3.0 Ω 320.00 mA Description RoHs RoHs, Halogen Free AEC-Q101 qualified Graphic Symbol Package type：SOT-23 1,7 FX2N7002KMEH-06S3 Rev B04.01 FX2N7002KMEH-06S3 60V N-Channel MOSFET Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Rating 60 ±20 Unit V V ID Drain Current - Continuous 320 mA IDM Pulsed Drain Current (Note 1) 2000 mA PD Total Power Dissipation (Note 3) 350 mW TJ Operating JunctionTemperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C TSTG Thermal Resistance Ratings Symbol RθJA Parameter Max Unit 357 °C/W Thermal Resistance Junction to Ambient Electrical Characteristics (TJ=25°C unless otherwise specified) Symbol Parameter BVDSS IDSS IGSS VGS (th) Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage RDS (on) Drain-Source On-Resistance gfs Forward Transconductance Test Conditions VGS =0V, ID =10µA VDS =60V, VGS =0V VGS =±20V, VDS =0V VDS =VGS, ID =250µA VGS =5V, ID =50mA VGS =4.5V, ID =200mA VGS =10V, ID =500mA VDS =10V, ID =250mA Min. Typ. 60 ----1.0 --------- --------------300 Test Conditions VDS =15V, VGS = 5V, ID = 200mA Min. Typ. --------- --------- Min. Typ. ----- 6 13 Max. Units --1 ±10 2.1 2.8 3.2 3.0 --- V uA uA V Ω mS Charges, Capacitance & Gate Resistance Symbol Qg CISS COSS CRSS Parameter Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V, VGS =0V, F =1MHz Max. Units 0.8 35 12 7 nC pF Switching Characteristics Symbol td(on) td(off) Parameter Turn-On Delay Time Turn-Off Delay Time Test Conditions VDS = 30V, VGEN =10V, RG =10Ω, ID =200mA, RL = 150Ω 2,7 Max. Units ----- ns FX2N7002KMEH-06S3 Rev B04.01 FX2N7002KMEH-06S3 60V N-Channel MOSFET Drain-Source Diode Characteristics and Ratings Symbol IS VSD trr Qrr Parameter Continuous Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VGS=0V , IS=200mA VGS=0V, VDD=30V, IS=1A, dIs/dt=100A/us Min. --------- Typ. --0.82 16.42 9.02 Max. Units 300 1.1 ----- mA V nS nC Notes 1.Maximum DC current limited by the package 2.Pulse test：pulse width≦ 300us, duty cycle≦ 2.0%. 3.1*MRP FR-4 PC board,2oz. 3,7 FX2N7002KMEH-06S3 Rev B04.01 FX2N7002KMEH-06S3 60V N-Channel MOSFET Characteristics Curves Output Characteristics Breakdown Voltage VS. Junction Temperature On-Resistance VS. Drain Current On-Resistance VS. Gate-Source voltage On-Resistance VS. Junction Temperature Gate Charge Waveform 4,7 FX2N7002KMEH-06S3 Rev B04.01 FX2N7002KMEH-06S3 60V N-Channel MOSFET Characteristics Curves Gate Charge Threshold Voltage VS. Temperature Capacitance VS. Drain to Source Voltage Source-Drain Diode Forward Voltage QRR and TRR Waveform definitions 5,7 FX2N7002KMEH-06S3 Rev B04.01 FX2N7002KMEH-06S3 60V N-Channel MOSFET Package Outline Dimensions TO-263 Dimensions in inches and (millimeters) 6,7 FX2N7002KMEH-06S3 Rev B04.01 FX2N7002KMEH-06S3 60V N-Channel MOSFET 7,7 FX2N7002KMEH-06S3 Rev B04.01