FXBSS138DWMEH-05S6G

FXBSS138DWMEH 55V N-Channel MOSFETs D1 G2 D2 D1 S2 G2 G1 S1 G1 BVDSS RDS(ON) ID 55 V 1.6 Ω 360 mA D2 S2 S1 SOT-363 Mechanical Data ‧Case：SOT-363 ‧Marking：B38 Features ‧55V, 0.36A, RDS(ON)=1.6Ω@VGS=10V ‧ESD Protected Applications ‧Fast switching ‧Load Switch ‧Green Device Available ‧Hand-Held Instruments Ordering Information Part No. Remark FXBSS138DWMEH-05S6 Package Packing SOT-363 3000 / Tape & Reel General FXBSS138DWMEH-05S6G Halogen Free FXBSS138DWMEH-05S6Q AEC-Q101 qualified Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDS VGS Parameter Rating Units Drain-Source Voltage 55 V Gate-Source Voltage ±20 V ID Drain Current - Continuous 360 mA IDM Drain Current - Pulsed 1200 mA 275 mW o PD Total Power Dissipation (TA=25 C) (NOTE 1) TJ Operating Junction Temperature Range -50 to 150 o C Storage Temperature Range -50 to 150 o C TSTG Marking Code B38 NOTES： 1.1*MRP FR-4 PC board,2oz. Thermal Characteristics Symbol RθJA May, 2021 Parameter Thermal Resistance Junction to Ambient Typ. --- 1/5 Max 450 Unit o C/W FXBSS138DWMEH-L01 FXBSS138DWMEH 55V N-Channel MOSFETs Electrical Characteristics (TJ=25oC, unless otherwise noted) Off Characteristics Parameter Symbol BVDSS Drain-Source Breakdown Voltage Conditions VGS=0V , ID=10uA Min. Typ. Max. Unit 55 --- --- V --- --- 1 uA --- --- ±10 uA Conditions VGS=2.5V , ID=100mA Min. Typ. Max. Unit --- 2.6 4.5 VGS=4.5V , ID=200mA --- 1.5 2.5 IDSS Drain-Source Leakage Current VDS=55V , VGS=0V IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V On Characteristics Symbol Parameter Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=500mA --- 1.3 1.6 VGS(th) Gate Threshold Voltage VGS=VDS , ID=250uA 0.8 --- 1.5 V Forward Transconductance VDS=10V , ID=250mA 300 --- --- mS Conditions VDS=15V , VGS=5V , ID=200mA Min. Typ. Max. Unit nC gfs Dynamic and switching Characteristics Parameter Symbol Qg Total Gate Charge Td(on) Delay Turn-On Time Td(off) Delay Turn-Off Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDD=30V , RL=150Ω , VGS=10V , RG=10Ω , ID=200mA VDS=25V , VGS=0V , F=1MHz --- --- 1 --- 1.3 --- --- 5.5 --- --- --- 50 --- 7 --- --- 4 --- Min. Typ. Max. Unit --- --- 500 mA --- 0.94 1.2 V --- 14.4 --- nS --- 5.8 --- nC ns pF Drain-Source Diode Characteristics and Ratings Parameter Symbol IS Continuous Source Current Conditions VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=500mA trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V, VDD=30V, IS=1A, dIs/dt=100A/us May, 2021 2/5 FXBSS138DWMEH-L01 FXBSS138DWMEH 55V N-Channel MOSFETs Characteristics Curves FIG. 2-Transfer Characteristic 1 1.2 V GS=10V~4.0V 1.0 0.8 3.0V 0.6 0.4 0.2 0 0 1 2 3 4 5 I D- D r a i n - t o - S o u r c e C u r r e n t ( A ) I D- D r a i n - t o - S o u r c e C u r r e n t ( A ) FIG. 1-Output Characteristic V DS =10V 0.8 0.6 0.4 TJ = 25oC 0.2 0 0 VDS- Drain-to-Source Voltage (V) 4 5 6 5 R DS( ON) - O n R e s i s t a n c e ( ) R D S ( ON ) - O n R e s i s t a n c e ( ) 3 FIG. 4-On-Resistance vs Gate to Source Voltage 5 4 3 V GS=4.5V 2 V GS=10V 1 4 3 I D =200mA 2 I D =500mA 1 0 0 0 0.2 0.4 0.6 0.8 1 0 1.2 FIG. 5-On-Resistance vs Junction Temperature 1.6 VGS =10 V ID =500mA 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 4 6 8 10 FIG. 6-Gate Charge Waveform VGS - Gat e- t o- Sour c e Vol t age( V) 1.8 2 V GS - Gate-to-Source Voltage (V) I D - Drain Current (A) R DS ( ON) - O n - R e s i s t a n c e ( N o r m a l i z e d ) 2 VGS- Gate-to-Source Voltage (V) FIG. 3-On-Resistance vs Drain Current 100 125 150 10 I D =200mA 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 Qg - Gate Charge (nC) TJ - Junction Temperature ( OC) May, 2021 1 3/5 FXBSS138DWMEH-L01 FXBSS138DWMEH 55V N-Channel MOSFETs Characteristics Curves FIG. 8-Threshold Voltage vs Temperature Vth - G- S Th r es h ol d Vol t ag e ( No r mal i z e d) FIG. 7-Source-Drain Diode Forward Voltage 1 I S - So ur c e Cu r r en t ( A) V GS = 0V O T J = 125 C O T J =25 C 0.1 O T J =-55 C 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) BVDSS - Br ea k d own Vo l t a g e( No r ml i z e d) FIG. 9-Breakdown Voltage vs Junction Temperature 1.2 I D = 250 A 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( OC) FIG. 10-QRR and TRR Waveform definitions 1.2 ID = 1 0 u A 1.15 1.1 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( OC) Package Outline Dimensions .087(2.20) .070(1.80) .026(0.65)Typ. .004(0.10)Max. .054(1.35) .045(1.15) .097(2.45) .070(1.80) .019(0.46) .003(0.10) .016(0.40) .003(0.10) .010(0.25) .003(0.08) .044(1.10) .031(0.80) SOT-363 Dimensions in inches and (millimeters) May, 2021 4/5 FXBSS138DWMEH-L01 FXBSS138DWMEH 55V N-Channel MOSFETs May, 2021 5/5 FXBSS138DWMEH-L01