GH276

GH276 Hall Effect Sensor with Complementary Output ‹ ‹ General Description The GH276 is an integrated Hall sensor with output driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier that amplifies the Hall voltage, a Schmitt trigger to provide switching hysteresis for noise rejection, a temperature compensation circuit to compensate the temperature drift of Hall sensitivity and two complementary open-collector drivers for sinking large load current. It also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits. Placing the device in a variable magnetic field, if the magnetic flux density is larger than threshold BOP, the pin DO will be turned low (on) and pin DOB will be turned high (off). This output state is held until the magnetic flux density reverses and falls below BRP, then causes DO to be turned high (off) and DOB turned low (on). · z · z z · · z · z · z z · Features On-Chip Hall Sensor 3.5V to 20V Supply Voltage 300mA (avg) Output Sink Current Reversed Supply Voltage Protection Build in Over Temperature Protection Function -20oC to 85oC Operating Temperature Low Profile TO-94 (SIP-4L) Package ‹ · z z · · z · z Applications Dual-Coil Brushless DC Motor Dual-Coil Brushless DC Fan Revolution Counting Speed Measurement GH276 is available in TO-94 (SIP-4L) package. ‹ Typical Applications D1 GH276 VCC DO 1 2 COIL1 COIL2 R1 470 R2 470 DOB GND 3 4 VCC + C1 2.2µF + C2 2.2µF Figure 1. Typical Application Circuit 鑫雁电子科技（上海）有限公司 GOCHIP ELECTRONICS TECHNOLOGY (Shanghai) CO., LTD. Preliminary datasheet Page 1-6 Rev. 1.3 Jun 11,2015 GH276 ‹ Pin Configuration TO-94(SIP-4L) 4 GND 3 2 DOB DO 1 VCC Figure 2. Pin Configuration of GH276 (Front View) ‹ Pin Description ‹ Function Pin Number Pin Name 1 VCC IC Power Supply voltage 2 DO Coil Driver Output 1,It is Low state during the N magnetic filed 3 DOB Coil Driver Output 2,It is Low state during the S magnetic filed 4 GND IC Ground Functional Block Diagram VCC DO 1 2 Temperature Compensation Regulator 4 Hall Sensor Amplifier Schmitt Trigger GND Output Driver 3 DOB Figure 3. Functional Block Diagram of GH276 鑫雁电子科技（上海）有限公司 GOCHIP ELECTRONICS TECHNOLOGY (Shanghai) CO., LTD. Preliminary datasheet Page 2-6 Rev. 1.3 Jun 11,2015 GH276 ‹ Absolute Maximum Ratings (Note 1) (TA=25oC) Symbol Value Unit Supply Voltage VCC 20 V Reverse Protection Voltage VRCC -20 V B Unlimited Gauss 300 mA 400 mA 600 mA PD 550 mW Die to atmosphere θJA 227 Die to package case θJC 49 oC/W TSTG -50 to 150 oC Parameter Magnetic Flux Density Continuous Output Current IO Hold Peak (start up) Power Dissipation Thermal Resistance Storage Temperature o C/W Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect device reliability. ‹ Recommended Operating Conditions (TA=25oC) Parameter Symbol Min Max VCC 3.5 20 V 85 oC Supply Voltage TA Ambient Temperature ‹ -20 Unit Electrical Characteristics (TA=25oC, VCC=14V, unless otherwise specified) Parameter Symbol VSAT Output Saturation Voltage Test Condition Min Typ Max Unit VCC=3.5V, IO=100mA 0.1 IO=300mA 0.35 0.6 V 0.1 10 µA 13 mA Output Leakage Current IOL VCE=16V Supply Current ICC VCC=16V, Output Open 6 V Output Rise Time tr RL=820Ω, CL=20pF 3.0 18 10 Output Fall Time tf RL=820Ω, CL=20pF 0.3 1.5 µs Switch Time Differential ∆t RL=820Ω, CL=20pF 3.0 10 µs Output Zener Breakdown Voltage VZ 鑫雁电子科技（上海）有限公司 GOCHIP ELECTRONICS TECHNOLOGY (Shanghai) CO., LTD. Preliminary datasheet 55 µs V Page 3-6 Rev. 1.3 Jun 11,2015 GH276 ‹ Magnetic Characteristics (TA=25oC) Parameter Symbol BOP Operating Point Grade Min A B Typ Max Unit 10 50 Gauss 5 70 Gauss 100 Gauss A -50 -10 Gauss B -70 -5 Gauss C -100 C BRP Releasing Point Gauss BHYS 65 Gauss V DO (V) Off-state High B HYS Turn off Turn on Low V SAT On-state N B RP 0 S B OP Magnetic Flux Density (Gauss) +14V GH276 S VCC Marking side 1 DO DOB GND 2 4 3 DO (VOUT1) R1 N 820Ω R2 TO-94 (SIP-4L) 820Ω DOB (VOUT2) C1 C2 20pF 20pF Figure 4. Basic Test Circuit 鑫雁电子科技（上海）有限公司 GOCHIP ELECTRONICS TECHNOLOGY (Shanghai) CO., LTD. Preliminary datasheet Page 4-6 Rev. 1.3 Jun 11,2015 GH276 ‹ Magnetic Characteristics (Continued) DO (V) DOB (V) 16 16 VCC 14 14 12 12 10 10 8 8 6 6 4 4 2 -40 -20 VSAT 0 20 40 -40 -20 0 20 40 Magnetic Flux Density B (Gauss) Figure 5. VDO vs. Magnetic Flux Density ‹ 2 VSAT Magnetic Flux Density B (Gauss) VCC Figure 6. VDOB vs. Magnetic Flux Density Package Sensor Location (Unit:mm) 1.75 1.35 ‹ Marking Information ( Top View ) G276 Y WW X 鑫雁电子科技（上海）有限公司 GOCHIP ELECTRONICS TECHNOLOGY (Shanghai) CO., LTD. Preliminary datasheet Y : Year : 0~9,"1"=2011 WW : Nth Weeks (01~52) X : Internal Code Page 5-6 Rev. 1.3 Jun 11,2015 GH276 ‹ Package Information Unit: mm TO-94(SIP-4L) Normal 鑫雁电子科技（上海）有限公司 GOCHIP ELECTRONICS TECHNOLOGY (Shanghai) CO., LTD. Preliminary datasheet Maximum per side Page 6-6 Rev. 1.3 Jun 11,2015