4410

4410 N -CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description ● Product Summary The 4410 combines advanced trench MOSFET VDS =30V ID =15A D technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load RDSON(10V typ) =8.3mΩ G switch and battery protection applications. RDSON(4.5V typ) =10.0mΩ S ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss D D D D Low Gate Charge for fast switching Dual DIE in one package 4410 ●Application Power Management in Notebook Computer, Portable Equipment and Battery S S S G SOP-8 Powered Systems ●Package Marking and Ordering Information: Part NO. 4410 Basic ordering unit (pcs) 4000 ●Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID@TC=25℃ 15 A ID@TC=75℃ 11 A ID@TC=100℃ 9.0 A Pulsed Drain Current ① IDM 45 A Total Power Dissipation PD@TC=25℃ 35 W Total Power Dissipation PD@TA=25℃ 0.8 W TJ -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 35 mJ Continuous Drain Current Operating Junction Temperature 1/6 4410 ●Thermal resistance Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 4.5 °C/W Thermal resistance, junction - ambient RthJA - - 60 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C Min. Typ Max. Unit Parameter ●Electronic Characteristics Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 30 - Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.2 Drain-Source Leakage Current IDSS VDS=30 VGS =0V Gate- Source Leakage Current IGSS Static Drain-source On Resistance RDS(ON) - V 1.5 2.5 V - - 1.0 uA VGS=±20V ,VDS =0V - - ±100 nA VGS=10V, ID=15A - 8.3 10 mΩ VGS=4.5V, ID=10A - 10 15 mΩ Forward Transconductance gFS VDS =25V, ID=10A - 8 - S Source-drain voltage VSD Is=10A - - 1.20 V Min. Typ Max. - 1007 - - 128.9 - - 117.7 - ●Electronic Characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Condition f = 1MHz VDS=15V VGS=0V Unit pF ●Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Total gate charge Qg VDD = 15V - 23.1 - Gate - Source charge Qgs ID = 10A - 4.28 - Gate - Drain charge Qgd VGS = 10V - 4.32 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; 2/6 Unit nC 4410 Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit 3/6 4410 I D- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics 15A TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) 15A Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) 25 20 15 4.5V 10 10V 5 0 0 5 10 15 20 25 30 ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward 4/6 4410 3000 40 Power Dissipation (W) Frequency=1.0MHz Capacitance (pF) 2000 Ciss 1000 500 Coss Crss 0 30 20 0 1 10 100 0 50 75 100 125 Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 Power De-rating 150 40 100 10 10µs 100µs 1ms 10ms DC 1 35 ID- Drain Current (A) RDS(ON) limited 1000 30 25 20 15 10 0.1 5 TC=25°C 0.01 0.01 0 0.1 1 10 100 VGS=10V 25 1000 50 75 100 125 150 Vds Drain-Source Voltage (V) TJ-Junction Temperature (℃) Figure 8 Safe Operation Area Figure 10 Current De-rating r(t),Normalized Effective Transient Thermal Impedance ID- Drain Current (A) 25 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse 0.1 0.0001 0.001 RθJA=60°C/W 0.01 0.1 1 10 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance 5/6 100 4410 SOP-8 Unit: mm SYMBOL min A A1 TYP max SYMBOL min max 4.80 5.25 C 1.30 1.75 0.37 0.49 C1 0.55 0.75 A2 1.27 C2 0.55 0.65 A3 0.41 C3 0.05 0.20 0.10 B 5.80 6.20 C4 B1 3.80 4.10 D B2 5.00 D1 6/6 0.20 0.23 1.05 0.40 0.62