HSBA20N15S

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ VDS 150 V RDS(ON),max 56 mΩ ID 23 A PRPAK5*6 Pin Configuration Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 23 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 16 A IDM Pulsed Drain Current2 60 A EAS Single Pulse Avalanche Energy3 53 mJ IAS Avalanche Current 18 A PD@TC=25℃ Total Power Dissipation3 72.6 W PD@TA=25℃ Total Power Dissipation3 2.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 60 ℃/W --- 1.72 ℃/W 1 HSBA20N15S N-Ch 150V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) IDSS Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V Static Drain-Source On-Resistance2 VGS=10V , ID=10A --- --- 56 m Static Drain-Source On-Resistance2 VGS=4.5V , ID=10A --- --- 68 m Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V VDS=120V , VGS=0V , TJ=25℃ --- --- 1 VDS=120V , VGS=0V , TJ=55℃ --- --- 5 Drain-Source Leakage Current uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 33 --- S Qg Total Gate Charge --- 19 --- Qgs Gate-Source Charge --- 4.5 --- Qgd Gate-Drain Charge --- 2.6 --- VDS=75V , VGS=4.5V , ID=10A nC --- 13 --- Rise Time VDD=75V , VGS=10V , RG=3.3 --- 8.2 --- Turn-Off Delay Time ID=10A --- 25 --- Fall Time --- 11 --- Ciss Input Capacitance --- 1090 --- Coss Output Capacitance --- 93 --- Crss Reverse Transfer Capacitance --- 6 --- Min. Typ. Max. Unit --- --- 23 A --- --- 60 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=75V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , --- 37 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 263 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.3mH,IAS=18A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBA20N15S N-Ch 150V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.5 Normalized On Resistance Normalized VGS(th) (V) 1.8 2.0 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 150 -50 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Ver 2.0 3 HSBA20N15S N-Ch 150V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSBA20N15S N-Ch 150V Fast Switching MOSFETs Ordering Information Part Number HSBA20N15S www.hs-semi.cn Package code PRPAK5*6 Ver 2.0 Packaging 3000/Tape&Reel 5