HSH120N85

HSH120N85 N-Ch 85V Fast Switching MOSFETs Description Product Summary The HSH120N85 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSH120N85 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Motor Drives SR(Synchronous rectification) DC/DC Converter Advanced high cell density Trench technology VDS 85 V RDS(ON),TYP 4.6 mΩ ID 120 A TO-263 Pin Configuration Absolute Maximum Ratings Symbol Parameter VDS Rating Units Drain-Source Voltage 85 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 120 A ID@TC=100℃ 10V1,6 100 A 480 A 145 mJ 220 W IDM EAS PD@TC=25℃ Continuous Drain Current, VGS @ Pulsed Drain Current2 Single Pulse Avalanche Total Power Energy3 Dissipation4 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC www.hs-semi.cn Thermal Resistance Junction-Case1 Ver 2.0 Typ. Max. Unit --- 62 ℃/W --- 0.7 ℃/W 1 HSH120N85 N-Ch 85V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage On-Resistance2 RDS(ON) Static Drain-Source VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 85 --- --- V VGS=10V , ID=20A --- 4.6 5.5 m VGS=VDS , ID =250uA 2 3 4 V VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=64V , VGS=0V , TJ=25℃ --- --- 100 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 80 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.1 ---  --- 48 --- --- 15 --- --- 13 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time VDD=40V , VGS=10V , ID=20A --- 20 --- VDD=40V , VGS=10V , RG=6, --- 39 --- ID=20A --- 44 --- nC ns Td(off) Turn-Off Delay Time Tf Fall Time --- 22 --- Ciss Input Capacitance --- 3600 --- Coss Output Capacitance --- 1050 --- Crss Reverse Transfer Capacitance --- 31 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 120 A VGS=0V , IS=50A , TJ=25℃ --- --- 1.4 V VDS=40V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,5 Voltage2 Conditions trr Reverse Recovery Time IF=20A , dI/dt=500A/µs , --- 60 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 340 --- nC www.hs-semi.cn Ver 2.0 2 HSH120N85 N-Ch 85V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 3 HSH120N85 N-Ch 85V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSH120N85 N-Ch 85V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5 HSH120N85 N-Ch 85V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 6