HSH90P06

HSH90P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSH90P06 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSH90P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -60 V RDS(ON),typ 7.5 mΩ ID -85 A TO263 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ ±20 V Continuous Drain Current1 -85 A Continuous Drain Current1 -60 A -310 A 360 mJ 210 W Pulsed Drain Current2 Single Pulse Avalanche Total Power Energy3 Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 0.71 ℃/W 1 HSH90P06 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V VGS=-10V , ID=-40A --- 7.5 9 VGS=-4.5V , ID=-30A --- 9 11 VGS=VDS , ID =-250uA -1.0 -1.4 -3.0 VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 50 m V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.4 ---  Qg Total Gate Charge (-4.5V) --- 170 --- Qgs Gate-Source Charge --- 29 --- Qgd Gate-Drain Charge --- 35 --- Td(on) Turn-On Delay Time VDS=-48V , VGS=-10V , ID=-40A nC --- 15 --- Rise Time VDD=-30V , VGS=-10V , RG=4, --- 88 --- Turn-Off Delay Time ID=-40A --- 150 --- Fall Time --- 101 --- Ciss Input Capacitance --- 9188 --- Coss Output Capacitance --- 501 --- Crss Reverse Transfer Capacitance --- 234 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -85 A VGS=0V , IS=-40A , TJ=25℃ --- --- -1.3 V --- 21 --- ns --- 17 --- nC Tr Td(off) Tf VDS=-25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Continuous Source Current1,5 Voltage2 VSD Diode Forward Trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions Isd=-40A,dI/dt=100A/us Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-48V,VGS=-10V,L=0.3mH 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSH90P06 P-Ch 60V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSH90P06 P-Ch 60V Fast Switching MOSFETs Switching Time Waveform www.hs-semi.cn Unclamped Inductive Waveform Ver 2.0 4 HSH90P06 P-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5