HSM0204

HSM0204 Dual N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSM0204 is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSM0204 meets the RoHS and Green VDS 100 V RDS(ON),max 112 mΩ ID 2.5 A Product requirement with full function reliability approved. l l l l Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology SOP8 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM ±20 V Continuous Drain Current, VGS @ 10V 1 2.5 A Continuous Drain Current, VGS @ 10V 1 2 A 10 A 6.1 mJ 11 A 1.5 W Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 85 ℃/W --- 36 ℃/W 1 HSM0204 Dual N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=2A --- 90 112 mΩ VGS=4.5V , ID=1A --- 95 120 mΩ 1.0 1.5 2.5 V mV/℃ VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Min. 2 VGS=VDS , ID =250uA --- -4.57 --- VDS=80V , VGS=0V , TJ=25℃ --- --- 10 VDS=80V , VGS=0V , TJ=55℃ --- --- 100 IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 4 Ω Qg Total Gate Charge (10V) --- 19.5 --- Qgs Gate-Source Charge --- 3.2 --- Qgd Gate-Drain Charge --- 3.6 --- --- 16.2 --- Td(on) VDS=60V , VGS=10V , ID=2A Turn-On Delay Time uA nC Rise Time VDD=50V , VGS=10V , RG=3.3Ω --- 3 --- Turn-Off Delay Time ID=1A --- 44 --- Fall Time --- 2.6 --- Ciss Input Capacitance --- 1535 --- Coss Output Capacitance --- 60 --- Crss Reverse Transfer Capacitance --- 37.4 --- Min. Typ. Max. Unit --- --- 4 A --- --- 8 A --- --- 1.2 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,5 Continuous Source Current Pulsed Source Current 2,5 Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSM0204 Dual N-Ch 100V Fast Switching MOSFETs Typical Characteristics 96 15 ID=2A VGS=10V VGS=7V 94 VGS=5V VGS=4.5V RDSON (mΩ) ID Drain Current (A) 12 9 92 VGS=3V 6 90 3 88 0 0 0.5 1 1.5 2 4 2.5 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) 1.4 1.5 1 1.0 0.6 0.2 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 TJ , Junction Temperature (℃) 150 Fig.6 Normalized R DSON vs. TJ Ver 2.0 3 HSM0204 Dual N-Ch 100V Fast Switching MOSFETs 10000 10.00 F=1.0MHz 100us 1ms 1000 1.00 10ms ID (A) Capacitance (pF) Ciss 100 100ms 0.10 Coss o Crss TA=25 C Single Pulse 10 1 5 9 13 17 21 0.01 0.01 25 VDS , Drain to Source Voltage (V) DC 0.1 Fig.7 Capacitance 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% Td(on) Tr Ton Td(off) VDD IAS Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS BVDSS-VDD BVDSS 10% VGS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Ver 2.0 4 HSM0204 Dual N-Ch 100V Fast Switching MOSFETs Ordering Information Part Number HSM0204 www.hs-semi.cn Package code SOP-8 Ver 2.0 Packaging 2500/Tape&Reel 5