HSBB3105

HSBB3105 Description Product Summary The HSBB3105 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBB3105 meet the RoHS and Green Product VDS -30 V RDS(ON),max 14 mΩ ID -42 A requirement 100% EAS guaranteed with full function reliability approved. l l l l l 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology PRPAK3X3 Pin Configuration Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ 10s Steady State Units -30 V ±20 V Continuous Drain Current, VGS @ -10V 1 -42 A Continuous Drain Current, VGS @ -10V 1 -27 A Continuous Drain Current, VGS @ -10V 1 -14.3 -9 A Continuous Drain Current, VGS @ -10V 1 -11.4 -7.2 A 2 IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy IAS Avalanche Current -130 A 125 mJ -50 A 37 W 3 Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ 4.2 1.67 W Thermal Data Symbol RθJA RθJA RθJC www.hs-semi.cn Parameter Typ. Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 75 ℃/W --- 30 ℃/W --- 3.36 ℃/W 1 HSBB3105 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V , ID=-30A --- 11 14 VGS=-4.5V , ID=-15A --- 17 22 -1.0 --- -2.5 VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ V IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-30A --- 30 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 9 --- Ω Qg Total Gate Charge (-4.5V) --- 22 --- Qgs Gate-Source Charge --- 8.7 --- Qgd Gate-Drain Charge --- 7.2 --- Turn-On Delay Time --- 8 --- Td(on) VDS=-15V , VGS=-4.5V , ID=-15A uA nC Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω --- 73.7 --- Turn-Off Delay Time ID=-15A --- 61.8 --- Fall Time --- 24.4 --- Ciss Input Capacitance --- 2215 --- Coss Output Capacitance --- 310 --- Crss Reverse Transfer Capacitance --- 237 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -25 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V IF=-15A , dI/dt=100A/µs , --- 19 --- nS TJ=25℃ --- 9 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions 1,5 Continuous Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-50A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Typical Characteristics www.hs-semi.cn Ver 2.0 2 HSBB3105 150 -ID Drain Current (A) 125 VGS=-10V VGS=-7V 100 75 VGS=-5V 50 VGS=-4.5V VGS=-3V 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 10 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-15V 8 TJ=150℃ TJ=25℃ 4 0 0.00 0.25 0.50 0.75 ID=-15A 8 6 4 2 0 1.00 0 -VSD , Source-to-Drain Voltage (V) 18 27 QG , Total Gate Charge (nC) 36 45 Fig.4 Gate-Charge Characteristics Fig.3 Source Drain Forward Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 9 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃ ) -50 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized R DSON vs. TJ Ver 2.0 3 HSBB3105 1000.00 10000 F=1.0MHz 10us Ciss 1000 100us 10.00 Coss -ID (A) Capacitance (pF) 100.00 10ms 100ms 1.00 Crss 100 1ms DC 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 21 0.1 25 1 -VDS , Drain to Source Voltage (V) Fig.7 Capacitance 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Ver 2.0 4 HSBB3105 Ordering Information Part Number HSBB3105 www.hs-semi.cn Package code PRPAK3*3 Ver 2.0 Packaging 3000/Tape&Reel 5