HSM1564

HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM1564 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSM1564 meet the RoHS and Green Product VDS 60 V RDS(ON),TYP 13.5 mΩ ID 8 A requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ Dual SOP8 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 8 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 6 A IDM Pulsed Drain Current2 32 A EAS Single Pulse Avalanche Energy3 150 mJ 2 W PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 75 ℃/W --- 24 ℃/W 1 HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VGS=10V , ID=8A --- 13.5 17 VGS=4.5V , ID=6A --- 15.5 20 m 1.2 2 3 V --- -5.24 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A 18 --- --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 ---  Qg Total Gate Charge (4.5V) --- 53 --- Qgs Gate-Source Charge --- 7.5 --- Qgd Gate-Drain Charge --- 12 --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Td(on) VGS=VDS , ID =250uA VDS=30V , VGS=10V , ID=6A nC --- 8 --- Rise Time VDD=30V , VGS=10V , RG=3, --- 5.5 --- Turn-Off Delay Time ID=4A --- 29 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 2600 --- Coss Output Capacitance --- 180 --- Crss Reverse Transfer Capacitance --- 123 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 8 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Tr Td(off) Tf Turn-On Delay Time uA VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,5 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.1 On-Region Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Curent and Fig.4 On-Resistance vs.Junction Gate Voltage Temperature Fig.5 On-Resistance vs. Gate-Source Fig.6 Body-Diode Characteristics Voltage www.hs-semi.cn Ver 2.0 3 HSM1564 Dual N-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSM1564 www.hs-semi.cn Package code SOP-8 Ver 2.0 Packaging 4000/Tape&Reel 4