HSCA2030

HSCA2030 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCA2030 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The HSCA2030 meet the RoHS and Green Product requirement with full function reliability approved. VDS 20 V RDS(ON),max 5.8 mΩ ID 56 A DFN3x3 Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Pin1 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID@TC=25℃ Continuous Drain Current, VGS @ 4.5V1 56 A ID@TC=100℃ Continuous Drain Current, VGS @ 4.5V1 35.6 A ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 19 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 15 A IDM Pulsed Drain Current2 100 A PD@TC=25℃ Total Power Dissipation1 31 W PD@TA=25℃ Total Power Dissipation1 3.6 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 35 ℃/W RθJC Thermal Resistance Junction-Case1 --- 4 ℃/W www.hs-semi.cn Ver 2.0 1 HSCA2030 Dual N-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V VGS=4.5V , ID=3A --- 4.3 5.8 VGS=3.9V , ID=3A --- 4.5 6.5 VGS=2.5V , ID=3A --- 5 7 VGS=1.8V , ID=3A --- 7 11 VGS=VDS , ID =250uA 0.4 --- 1.0 VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 m V IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±10 uA gfs Forward Transconductance VDS=5V , ID=3A --- 42 --- S --- 38 --- --- 33 --- --- 4.5 --- --- 12 --- Qg Total Gate Charge (4.5V) Total Gate Charge (3.9V) Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V , ID=3A uA nC --- 22 --- Rise Time VDD=16V , VGS=4.5V , RG=6 --- 41 --- Turn-Off Delay Time ID=3A --- 77 --- Fall Time --- 21 --- Ciss Input Capacitance --- 3165 --- Coss Output Capacitance --- 380 --- Crss Reverse Transfer Capacitance --- 325 --- Min. Typ. Max. Unit --- --- 30 A --- --- 100 A --- --- 1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter IS Continuous Source Current1 ISM Pulsed Source Current2 VSD Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=3A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t ≤10s. 2.The data tested by pulsed , pulse width ≦ 10us , duty cycle ≦ 1% www.hs-semi.cn Ver 2.0 2 HSCA2030 Dual N-Ch Fast Switching MOSFETs Typical Characteristics ID Drain Current (A) ID=3A RDSON (mΩ) VGS=4 VGS=3. VGS=2. VGS=1. VGS=1 VDS , Drain-to-Source Voltage (V) VGS (V) Fig.1 Typical Output Characteristics VGS Gate to Source Voltage (V) Fig.2 On-Resistance vs. Gate-Source VDS=10 VID=3A Voltage QG , Total Gate Charge (nC) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode Fig.5 VGS(th) vs. TJ www.hs-semi.cn Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSCA2030 Dual N-Ch Fast Switching MOSFETs Ciss Capacitance (pF) ID (A) 100us 1m 10m 100 D TA=25oC Cos Crs F=1.0MHz -VDS , Drain to Source Voltage (V) VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TA+P DMXRθJA 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSCA2030 Dual N-Ch Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5