HSL10P06

HSL10P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSL10P06 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSL10P06 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS -60 V RDS(ON),max 70 mΩ ID -10 A SOT223 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM IAS PD@TA=25℃ ±20 V Continuous Drain Current, VGS @ -10V1 -10 A Continuous Drain Current, VGS @ -10V1 -3 A -28 A -26 A 1.5 W Pulsed Drain Current2 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 70 ℃/W --- 36 ℃/W 1 HSL10P06 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ VGS=-10V , ID=-5A --- 55 70 VGS=-4.5V , ID=-3A --- 64 105 -1.0 --- -2.5 V --- 4.08 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-2A --- 15 --- S Qg Total Gate Charge (-4.5V) --- 9.6 --- Qgs Gate-Source Charge --- 3.4 --- Qgd Gate-Drain Charge --- 2.62 --- Td(on) Turn-On Delay Time VDS=-48V , VGS=-4.5V , ID=-10A nC --- 27.4 --- Rise Time VDS=-15V , VGS=-10V , RG=3.3, --- 19.4 --- Turn-Off Delay Time ID=-1A --- 60.2 --- Fall Time --- 7.4 --- Ciss Input Capacitance --- 1431 --- Coss Output Capacitance --- 99 --- Crss Reverse Transfer Capacitance --- 78 --- Min. Typ. Max. Unit --- --- -10 A --- --- -28 A --- --- -1.2 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-26A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSL10P06 P-Ch 60V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSL10P06 P-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSL10P06 P-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSL10P06 www.hs-semi.cn Package code SOT-223 Ver 2.0 Packaging 3000/Tape&Reel 5