HSBA3031
P-Ch 30V Fast Switching MOSFETs
Description
Product Summary
The HSBA3031 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The HSBA3031 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
VDS
-30
V
RDS(ON),max
7.2
mΩ
ID
-70
A
⚫
⚫
⚫
⚫
⚫
PRPAK5X6 Pin Configuration
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ -10V1,6
-70
A
ID@TC=100℃
Continuous Drain Current, VGS @ -10V1,6
-50
A
IDM
Pulsed Drain Current2
-200
A
EAS
Single Pulse Avalanche Energy3
80
mJ
IAS
Avalanche Current
-40
A
PD@TC=25℃
Total Power Dissipation4
90
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
RθJA
RθJC
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Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-ambient 1(t≦10S)
---
20
℃/W
Thermal Resistance Junction-ambient 1(Steady State)
---
50
℃/W
Thermal Resistance Junction-case 1
---
1.6
℃/W
Ver 2.0
1
HSBA3031
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
IDSS
Gate Threshold Voltage
Drain-Source Leakage Current
Conditions
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-30
---
---
V
VGS=-10V , ID=-20A
---
6
7.2
m
VGS=-4.5V , ID=-15A
---
9.5
12
m
VGS=VDS , ID =-250uA
V
-1.2
---
-2.5
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.2
---
Ω
Qg
Total Gate Charge (-10V)
---
60
---
Qgs
Gate-Source Charge
---
9
---
Qgd
Gate-Drain Charge
---
15
---
VDS=-15V , VGS=-10V , ID=-18A
nC
---
17
---
Rise Time
VDD=-15V , VGS=-10V , RG=3.3,
---
40
---
Turn-Off Delay Time
ID=-20A
---
55
---
Fall Time
---
13
---
Ciss
Input Capacitance
---
3450
---
Coss
Output Capacitance
---
255
---
Crss
Reverse Transfer Capacitance
---
140
---
Min.
Typ.
Max.
Unit
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=-25V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
Parameter
Conditions
Continuous Source Current1,5
VG=VD=0V , Force Current
---
---
-70
A
VSD
Diode Forward Voltage2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-20A , di/dt=100A/µs ,
---
22
---
nS
Qrr
Reverse Recovery Charge
TJ=25℃
---
72
---
nC
Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is V DD=-50V,VGS=-10V,L=0.1mH,IAS=-40A
4.The power dissipation is limited by 150℃ junction temperature
5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation
6.The maximum current rating is package limited.
www.hs-semi.cn
Ver 2.0
2
HSBA3031
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
Voltage
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized -VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
www.hs-semi.cn
Ver 2.0
3
HSBA3031
P-Ch 30V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P DM
SINGLE
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
Waveform
www.hs-semi.cn
Ver 2.0
4
HSBA3031
P-Ch 30V Fast Switching MOSFETs
Ordering Information
Part Number
HSBA3031
www.hs-semi.cn
Package code
PRPAK5*6
Ver 2.0
Packaging
3000/Tape&Reel
5
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