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HSBA3031

HSBA3031

  • 厂商:

    HUASHUO(华朔)

  • 封装:

    PRPAK-8_5X6MM

  • 描述:

  • 数据手册
  • 价格&库存
HSBA3031 数据手册
HSBA3031 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3031 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -30 V RDS(ON),max 7.2 mΩ ID -70 A ⚫ ⚫ ⚫ ⚫ ⚫ PRPAK5X6 Pin Configuration Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1,6 -70 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1,6 -50 A IDM Pulsed Drain Current2 -200 A EAS Single Pulse Avalanche Energy3 80 mJ IAS Avalanche Current -40 A PD@TC=25℃ Total Power Dissipation4 90 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol RθJA RθJC www.hs-semi.cn Parameter Typ. Max. Unit Thermal Resistance Junction-ambient 1(t≦10S) --- 20 ℃/W Thermal Resistance Junction-ambient 1(Steady State) --- 50 ℃/W Thermal Resistance Junction-case 1 --- 1.6 ℃/W Ver 2.0 1 HSBA3031 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V , ID=-20A --- 6 7.2 m VGS=-4.5V , ID=-15A --- 9.5 12 m VGS=VDS , ID =-250uA V -1.2 --- -2.5 VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.2 --- Ω Qg Total Gate Charge (-10V) --- 60 --- Qgs Gate-Source Charge --- 9 --- Qgd Gate-Drain Charge --- 15 --- VDS=-15V , VGS=-10V , ID=-18A nC --- 17 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 40 --- Turn-Off Delay Time ID=-20A --- 55 --- Fall Time --- 13 --- Ciss Input Capacitance --- 3450 --- Coss Output Capacitance --- 255 --- Crss Reverse Transfer Capacitance --- 140 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-25V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS Parameter Conditions Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -70 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-20A , di/dt=100A/µs , --- 22 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 72 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=-50V,VGS=-10V,L=0.1mH,IAS=-40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation 6.The maximum current rating is package limited. www.hs-semi.cn Ver 2.0 2 HSBA3031 P-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.1 Typical Output Characteristics Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized -VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ www.hs-semi.cn Ver 2.0 3 HSBA3031 P-Ch 30V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSBA3031 P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSBA3031 www.hs-semi.cn Package code PRPAK5*6 Ver 2.0 Packaging 3000/Tape&Reel 5
HSBA3031 价格&库存

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