HSBL020N08

HSBL020N08 N-Ch 80V Fast Switching MOSFETs Description Product Summary The HSBL020N08 is the high cell density SGT Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous rectification applications. The HSBL020N08 meet the RoHS and HalogenFree compliant product requirement, 100% EAS guaranteed with full function reliability approved. VDS 80 V RDS(ON),typ 1.4 mΩ ID 240 A TOLL Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 240 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 100 A IDM Pulsed Drain Current2 730 A 2500 mJ 225 W EAS PD@TC=25℃ Single Pulse Avalanche Total Power Energy3 Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 60 ℃/W RθJC Thermal Resistance Junction-Case1 --- 0.54 ℃/W www.hs-semi.cn Ver 2.0 Typ. 1 HSBL020N08 N-Ch 80V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage On-Resistance2 RDS(ON) Static Drain-Source VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 80 --- --- V VGS=10V , ID=50A --- 1.4 2.0 m VGS=VDS , ID =250uA 2 3 4 V VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=125℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 ---  --- 204 --- --- 54 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 47 --- Td(on) Turn-On Delay Time --- 39 --- Tr Rise Time VDD=40V , VGS=10V , RL=3, --- 136 --- Td(off) Turn-Off Delay Time ID=20A --- 121 --- VDS=40V , VGS=10V , ID=50A nC ns Tf Fall Time --- 156 --- Ciss Input Capacitance --- 13650 --- Coss Output Capacitance --- 20100 --- Crss Reverse Transfer Capacitance --- 580 --- Min. Typ. Max. Unit VDS=45V , VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter Conditions VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25℃ --- 0.85 1.2 V Trr Body Diode Reverse Recovery Time If=30A, DI/dt=500A/us --- 112 --- ns Qrr Body Diode Reverse Recovery charge If=30A, DI/dt=500A/us --- 313 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 5.The maximum current rating is package limited. www.hs-semi.cn Ver 2.0 2 HSBL020N08 N-Ch 80V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSBL020N08 N-Ch 80V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSBL020N08 N-Ch 80V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5 HSBL020N08 N-Ch 80V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 6