HSU6115

HSU6115 P-Ch 60V Fast Switching MOSFETs Product Summary Description The HSU6115 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU6115 meet the RoHS and Green VDS -60 V RDS(ON),max 25 mΩ ID -35 A Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Configuration l l l l l Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ±20 V Continuous Drain Current, -VGS @ -10V 1 -35 A Continuous Drain Current, -VGS @ -10V 1 -27 A 2 IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy IAS Avalanche Current -70 A 113 mJ 47.6 A 52.1 W 3 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 62 ℃/W --- 2.4 ℃/W 1 HSU6115 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.035 --- V/℃ VGS=-10V , ID=-18A --- --- 25 VGS=-4.5V , ID=-12A --- --- 33 -1.0 --- -2.5 V --- 4.28 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-18A --- 23 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 7 --- Ω Qg Total Gate Charge (-4.5V) --- 25 --- Qgs Gate-Source Charge --- 6.7 --- Qgd Gate-Drain Charge --- 5.5 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-12A nC --- 38 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 23.6 --- Turn-Off Delay Time ID=-1A --- 100 --- Fall Time --- 6.8 --- Ciss Input Capacitance --- 3635 --- Coss Output Capacitance --- 224 --- Crss Reverse Transfer Capacitance --- 141 --- Min. Typ. Max. Unit --- --- -35 A --- --- -70 A --- --- -1 V Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,5 Continuous Source Current Pulsed Source Current 2,5 Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-47.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU6115 P-Ch 60V Fast Switching MOSFETs Typical Characteristics 30 12 ID=-12A 28 VGS=-10V 8 RDSON (mΩ) -ID Drain Current (A) 10 VGS=-7V 26 VGS=-5V 6 VGS=-4.5V 24 4 22 VGS=-3V 2 0 20 0 0.25 0.5 0.75 -VDS Drain-to-Source Voltage (V) 1 2 4 Fig.1 Typical Output Characteristics 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 10 12 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics Of Reverse 40 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 20 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) v.s TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized R DSON v.s TJ Ver 2.0 3 HSU6115 P-Ch 60V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 100us Capacitance (pF) Ciss 10.00 1000 -ID (A) 1ms 100 10ms 1.00 Coss Crss 100ms DC 0.10 o Tc=25 C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 1 Fig.7 Capacitance 10 -VDS (V) 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Waveform Ver 2.0 4 HSU6115 P-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSU6115 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5