HSBA6214

HSBA6214 Dual N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6214 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA6214 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS 60 V RDS(ON),typ 35 mΩ ID 17 A PRPAK5*6 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TA=25℃ ±20 V Continuous Drain Current, VGS @ 10V1 17 A Continuous Drain Current, VGS @ 10V1 11 A 40 A 22 mJ 21 A Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 5 ℃/W 1 HSBA6214 Dual N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.044 --- V/℃ VGS=10V , ID=15A --- 35 42 VGS=4.5V , ID=7A --- 40 52 1.0 --- 2.5 V --- -4.8 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=15A --- 25.3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 ---  Qg Total Gate Charge (4.5V) --- 19 --- --- 2.6 --- VDS=48V , VGS=10V , ID=15A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 4.1 --- Turn-On Delay Time --- 3 --- Td(on) nC Rise Time VDD=30V , VGS=10V , RG=3.3 --- 34 --- Turn-Off Delay Time ID=15A --- 23 --- Fall Time --- 6 --- Ciss Input Capacitance --- 1027 --- Coss Output Capacitance --- 65 --- Crss Reverse Transfer Capacitance --- 46 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 17 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V --- 12.1 --- nS --- 6.7 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD trr Qrr Parameter Continuous Source Diode Forward Current1,5 Voltage2 Conditions Reverse Recovery Time Reverse Recovery Charge IF=4A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=21A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBA6214 Dual N-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics diode Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 HSBA6214 Dual N-Ch 60V Fast Switching MOSFETs Fig.8 Safe Operating Area Fig.7 Capacitance Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSBA6214 Dual N-Ch 60V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5