HSBB3103

HSBB3103 Description Product Summary The HSBB3103 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBB3103 meet the RoHS and Green VDS -30 V RDS(ON),max 20 mΩ ID -32 A Product requirement, 100% EAS guaranteed with full function reliability approved. l l l l l 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology PRPAK3X3 Pin Configuration Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 10s Steady State Units -30 V ±25 V -32 A -20 A ID@TC=25℃ Continuous Drain Current, VGS @ -10V 1 ID@TC=100℃ Continuous Drain Current, VGS @ -10V 1 Continuous Drain Current, VGS @ -10V 1 -12.2 -7.7 A Continuous Drain Current, VGS @ -10V 1 -9.8 -6.2 A ID@TA=25℃ ID@TA=70℃ IDM Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 -65 A 72.2 mJ -38 A 29 W Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ 4.2 1.67 W Thermal Data Symbol RθJA RθJA RθJC www.hs-semi.cn Parameter Typ. Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 75 ℃/W --- 30 ℃/W --- 4.32 ℃/W 1 HSBB3103 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-15A --- --- 20 VGS=-4.5V , ID=-10A --- --- 32 -1.0 --- -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-15A --- 19 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 --- Ω Qg Total Gate Charge (-4.5V) --- 12.5 --- Qgs Gate-Source Charge --- 5.4 --- Qgd Gate-Drain Charge --- 5 --- Td(on) VDS=-15V , VGS=-4.5V , ID=-15A nC --- 4.4 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 11.2 --- Turn-Off Delay Time ID=-15A --- 34 --- Fall Time --- 18 --- Ciss Input Capacitance --- 1345 --- Coss Output Capacitance --- 194 --- Crss Reverse Transfer Capacitance --- 158 --- Min. Typ. Max. Unit --- --- -32 A --- --- -65 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,5 IS Continuous Source Current ISM Pulsed Source Current 2,5 2 VG=VD=0V , Force Current VSD Diode Forward Voltage trr Reverse Recovery Time IF=-15A , dI/dt=100A/µs , --- 12.4 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 5 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBB3103 Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 10 12 ID=-15A -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 8 6 VDS=15V 4 VDS=24V 2 0 0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 10 15 20 QG , Total Gate Charge (nC) 25 30 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized R DSON vs. TJ Ver 2.0 3 HSBB3103 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Ver 2.0 4 HSBB3103 Ordering Information Part Number HSBB3103 www.hs-semi.cn Package code PRPAK3*3 Ver 2.0 Packaging 3000/Tape&Reel 5