HSU100P03

HSU100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ VDS -30 V RDS(ON),typ 4 mΩ ID -100 A TO252 Pin Configuration Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1,6 -100 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1,6 -65 A IDM Pulsed Drain Current2 -400 A EAS Single Pulse Avalanche Energy3 210 mJ IAS Avalanche Current -30 A PD@TC=25℃ Total Power Dissipation4 105 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol RθJA RθJC www.hs-semi.cn Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Thermal Resistance Junction-case 1 Ver 2.0 Typ. Max. Unit --- 20 ℃/W --- 50 ℃/W --- 1.45 ℃/W 1 HSU100P03 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V , ID=-20A --- 4 5.3 m VGS=-4.5V , ID=-15A --- 5.7 8.2 m VGS=VDS , ID =-250uA V -1.0 --- -2.5 VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=±20V , VDS=0V --- --- ±100 --- 45 --- --- 9 --- IGSS Gate-Source Leakage Current Qg Total Gate Charge (-10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 12 --- Turn-On Delay Time --- 17 --- Td(on) Tr Td(off) VDS=-15V , VGS=-10V , ID=-30A Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 19 --- Turn-Off Delay Time ID=-30A --- 68 --- uA nA nC ns Fall Time --- 23 --- Ciss Input Capacitance --- 9300 --- Coss Output Capacitance --- 989 --- Crss Reverse Transfer Capacitance --- 700 --- Min. Typ. Max. Unit Tf VDS=-15V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -100 A Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-15V,VGS=-10V,L=0.5mH,Rg=25R,IAS=-30A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation 6.The maximum current rating is package limited. www.hs-semi.cn Ver 2.0 2 HSU100P03 P-Ch 30V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSU100P03 P-Ch 30V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSU100P03 P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSU100P03 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5