HSBA6074

HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS 60 V RDS(ON),typ 1.7 mΩ ID 100 A PRPAK5X6 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ Motor Control 100% EAS Guaranteed DC/DC Converter. Excellent CdV/dt effect decline Synchronous rectifier applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V 100 A ID@TC=25℃ ID@TC=100℃ Continuous Drain Current1,6 Continuous Drain Current1,6 66 A IDM Pulsed Drain Current2 400 A EAS Single Pulse Avalanche Energy3 306 mJ IAS Avalanche Current 35 A 83 W PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. 1 Max. Unit --- 55 ℃/W --- 1.1 ℃/W 1 HSBA6074 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VGS=10V , ID=20A --- 1.7 2.1 m VGS=4.5V , ID=20A --- 2.3 3.2 m VGS=VDS , ID =250uA 1.2 --- 2.3 V VDS=52V , VGS=0V , TJ=25℃ --- --- 1 VDS=52V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 60 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.6 ---  Qg Total Gate Charge (10V) --- 102 --- Qgs Gate-Source Charge --- 16 --- Qgd Gate-Drain Charge --- 28 --- VDS=30V , VGS=10V , ID=20A nC --- 15 --- Rise Time VDD=30V , VGS=10V , RG=3, --- 12 --- Turn-Off Delay Time ID=20A --- 60 --- Fall Time --- 19 --- Ciss Input Capacitance --- 5480 --- Coss Output Capacitance --- 1822 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 100 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V --- 50 --- nS --- 72 --- nC Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,5 Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions IF=20A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=50V,VGS=10V,L=0.5mH,IAS=35A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.The maximum current rating is package limited. www.hs-semi.cn Ver 2.0 2 HSBA6074 N-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.1 Typical Output Characteristics Fig.4 Gate-Charge Characteristics Fig.3 Diode Forward Voltage vs. Current Fig.5 Normalized VGS(th) vs TJ www.hs-semi.cn Fig.6 Normalized RDSON vs TJ Ver 2.0 3 HSBA6074 N-Ch 60V Fast Switching MOSFETs Fig.8 Safe Operating Area Fig.7 Capacltance Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.hs-semi.cn Ver 2.0 4 HSBA6074 N-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSBA6074 www.hs-semi.cn Package code PRPAK5*6 Ver 2.0 Packaging 3000/Tape&Reel 5