HSW6604

HSW6604 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSW6604 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The HSW6604 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDSON ID 20V 38mΩ 4A -20V 64mΩ -3A SOT23-6L Pin Configuration ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM N-Channel P-Channel Steady State Steady State 20 -20 V Units ±12 ±12 V Continuous Drain Current, VGS @ -4.5V1 4 -3 A Continuous Drain Current, VGS @ -4.5V1 3 -2.6 A Pulsed Drain Current2 16 -12.8 A PD@TA=25℃ Total Power Dissipation3 1.1 1.1 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient 1 www.hs-semi.cn Ver 2.0 Typ. Max. Unit --- 100 ℃/W 1 HSW6604 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V VGS=4.5V , ID=3A --- 38 48 VGS=2.5V , ID=2A --- 45 55 VGS=VDS , ID =250uA 0.5 0.75 1.2 VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 m V uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 5 --- S Qg Total Gate Charge (4.5V) --- 2.7 --- Qgs Gate-Source Charge --- 0.4 --- Qgd Gate-Drain Charge --- 0.5 --- VDS=10V , VGS=4.5V , ID=3A nC --- 2.3 --- Rise Time VDD=10V , VGS=4.5V , RG=3.3 --- 3.1 --- Turn-Off Delay Time ID=3A --- 21 --- Fall Time --- 2.6 --- Ciss Input Capacitance --- 240 --- Coss Output Capacitance --- 49 --- Crss Reverse Transfer Capacitance --- 23 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 1.8 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,4 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSW6604 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage 5 IS Source Current(A) 4 3 2 TJ=150℃ TJ=25℃ 1 0 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) 0 50 100 150 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs TJ www.hs-semi.cn -50 Fig.6 Normalized RDSON vs TJ Ver 2.0 3 HSW6604 N-Ch and P-Ch Fast Switching MOSFETs 1000 F=1.0MHz Capacitance (pF) Ciss 100 Coss Crss 10 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSW6604 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V VGS=-4.5V , ID=-3A --- 64 80 VGS=-2.5V , ID=-2A --- 82 120 VGS=VDS , ID =-250uA -0.4 -0.65 -1.2 VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 m V uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 5 --- S Qg Total Gate Charge (-4.5V) --- 6.1 --- Qgs Gate-Source Charge --- 1.7 --- Qgd Gate-Drain Charge --- 1.2 --- VDS=-10V , VGS=-4.5V , ID=-3A nC --- 12 --- Rise Time VDD=-10V , VGS=-4.5V , RG=3.3 --- 6.6 --- Turn-Off Delay Time ID=-3A --- 113 --- Fall Time --- 46 --- Ciss Input Capacitance --- 561 --- Coss Output Capacitance --- 61 --- Crss Reverse Transfer Capacitance --- 52 --- Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -1.8 A Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- -0.81 -1.2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 5 HSW6604 N-Ch and P-Ch Fast Switching MOSFETs Typical Characteristics 12 VGS=-5V VGS=-4.5V -ID Drain Current (A) 10 VGS=-3V 8 VGS=-2.5V 6 VGS=-1.8V 4 2 0 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage 10 -IS Source Current(A) 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.4 0.8 1.2 -VSD , Source-to-Drain Voltage (V) Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1.4 1 1.0 0.6 0.6 0.2 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) 0 50 100 150 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs TJ www.hs-semi.cn -50 Fig.6 Normalized RDSON vs TJ Ver 2.0 6 HSW6604 N-Ch and P-Ch Fast Switching MOSFETs 1000 100.00 Ciss 100us -ID (A) Capacitance (pF) 10.00 Coss 100 10ms 1.00 100ms Crss 1s 0.10 TA=25℃ Single Pulse F=1.0MHz 10 DC 0.01 1 5 9 13 17 -VDS , Drain to Source Voltage (V) 21 0.1 1 Fig.7 Capacitance 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TA + PDM x RθJA 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 7 HSW6604 N-Ch and P-Ch Fast Switching MOSFETs SOT23-6 Package Outline Dimensions www.hs-semi.cn Ver 2.0 8