HSU0004

HSU0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0004 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . VDS 100 V RDS(ON),max 112 mΩ ID 12 A The HSU0004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l l l l TO252 Pin Configuration Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V Continuous Drain Current, VGS @ 10V 1 12 A Continuous Drain Current, VGS @ 10V 1 7.7 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V 1 3 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V 1 2.4 A 24 A 6.1 mJ ID@TC=25℃ ID@TC=100℃ IDM Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 11 A Total Power Dissipation 3 34.7 W PD@TA=25℃ Total Power Dissipation 3 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 62 ℃/W --- 3.6 ℃/W 1 HSU0004 N-Ch 100V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=10A --- --- 112 mΩ VGS=4.5V , ID=8A --- --- 120 mΩ 1.0 --- 2.5 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 13 --- S VDS=0V , VGS=0V , f=1MHz --- 2 --- Ω --- 26.2 --- --- 4.6 --- Rg Gate Resistance Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 5.1 --- Turn-On Delay Time --- 4.2 --- Td(on) Tr Td(off) Tf Ciss VDS=80V , VGS=10V , ID=10A uA nC Rise Time VDD=50V , VGS=10V , RG=3.3Ω --- 8.2 --- Turn-Off Delay Time ID=10A --- 35.6 --- --- 9.6 --- --- 1535 --- --- 60 --- --- 37 --- Min. Typ. Max. Unit --- --- 12 A --- --- 24 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Fall Time Input Capacitance VDS=15V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,5 Continuous Source Current Pulsed Source Current 2,5 2 VG=VD=0V , Force Current VSD Diode Forward Voltage trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , --- 37 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 27.3 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU0004 N-Ch 100V Fast Switching MOSFETs Typical Characteristics 25 VGS=10V VGS=7V 20 ID Drain Current (A) VGS=5V 15 VGS=4.5V 10 5 VGS=3V 0 0 2 4 6 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) (V) 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 50 100 150 Fig.6 Normalized R DSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 TJ , Junction Temperature (℃) Ver 2.0 3 HSU0004 N-Ch 100V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 10us 100us 10.00 1000 1ms ID (A) Capacitance (pF) Ciss 100 10ms 100ms 1.00 DC Coss 0.10 TC=25℃ Single Pulse Crss 10 0.01 1 5 9 13 17 21 25 0.1 VDS , Drain to Source Voltage (V) Fig.7 Capacitance 1 10 100 VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% Td(on) Tr Ton Td(off) VDD IAS Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS BVDSS-VDD BVDSS 10% VGS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Ver 2.0 4