HSBA6115

HSBA6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSBA6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -60 V RDS(ON),max 25 mΩ ID -35 A PRPAK5*6 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, -VGS @ -10V1 -35 A ID@TC=100℃ -10V1 -27 A -70 A 113 mJ 47.6 A 52.1 W IDM EAS IAS PD@TC=25℃ Continuous Drain Current, -VGS @ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 2.4 ℃/W 1 HSBA6115 P-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V Reference to 25℃ , ID=-1mA --- -0.035 --- V/℃ VGS=-10V , ID=-18A --- --- 25 VGS=-4.5V , ID=-12A --- --- 33 -1.0 --- -2.5 V --- 4.28 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-18A --- 23 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 7 ---  Qg Total Gate Charge (-4.5V) --- 25 --- --- 6.7 --- VDS=-20V , VGS=-4.5V , ID=-12A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 5.5 --- Td(on) Turn-On Delay Time --- 38 --- nC Rise Time VDD=-15V , VGS=-10V , RG=3.3, --- 23.6 --- Turn-Off Delay Time ID=-1A --- 100 --- Fall Time --- 6.8 --- Ciss Input Capacitance --- 3635 --- Coss Output Capacitance --- 224 --- Crss Reverse Transfer Capacitance --- 141 --- Min. Typ. Max. Unit --- --- -35 A --- --- -70 A --- --- -1 V Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-47.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBA6115 P-Ch 60V Fast Switching MOSFETs Typical Characteristics 30 12 ID=-12A 28 VGS=-10V 8 RDSON (mΩ) -ID Drain Current (A) 10 VGS=-7V 26 VGS=-5V 6 VGS=-4.5V 24 4 22 VGS=-3V 2 20 0 0 0.25 0.5 0.75 -VDS Drain-to-Source Voltage (V) 2 1 4 Fig.1 Typical Output Characteristics 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source Voltage 10 12 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics Of Reverse 40 60 Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 20 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) v.s TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Ver 2.0 3 HSBA6115 P-Ch 60V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 100us Ciss Capacitance (pF) 10.00 1000 -ID (A) 1ms 100 10ms 1.00 Coss 100ms DC Crss 0.10 Tc=25o C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 1 Fig.7 Capacitance 10 -VDS (V) 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM D = TON/T SINGLE PULSE 0.01 0.00001 TON T 0.01 0.0001 TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Waveform Ver 2.0 4 HSBA6115 P-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSBA6115 www.hs-semi.cn Package code PRPAK5*6 Ver 2.0 Packaging 3000/Tape&Reel 5