HSU100P04

HSU100P04 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU100P04 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU100P04 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. VDS -40 V RDS(ON),max 5.8 mΩ ID -100 A TO252 Pin Configuration ⚫ ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge 100% EAS Guaranteed Excellent CdV/dt effect decline Green Device Available Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -100 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -64 A IDM Pulsed Drain Current2 -295 A 380 mJ EAS IAS PD@TC=25℃ PD@TA=25℃ Single Pulse Avalanche Energy3 Avalanche Current -50 A Total Power Dissipation4 52.1 W Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 1.8 ℃/W 1 HSU100P04 P-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ VGS=-10V , ID=-20A --- 4.6 5.8 VGS=-4.5V , ID=-10A --- 6 9.1 -1.2 -1.8 -2.5 V --- 4.74 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-15V , ID=-18A --- 50 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 7 14  Qg Total Gate Charge --- 115 --- --- 24 --- VDS=-20V , VGS=-10V , ID=-12A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 26 --- Td(on) Turn-On Delay Time --- 19 --- nC Rise Time VDD=-20V , VGS=-10V , RG=3, --- 12 --- Turn-Off Delay Time ID=-12A --- 80 --- Fall Time --- 18 --- Ciss Input Capacitance --- 7090 --- Coss Output Capacitance --- 930 --- Crss Reverse Transfer Capacitance --- 722 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -100 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Tr Td(off) Tf VDS=-20V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,5 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-32V,VGS=-10V,L=0.1mH,IAS=-50A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU100P04 P-Ch 40V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSU100P04 P-Ch 40V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSU100P04 P-Ch 40V Fast Switching MOSFETs Ordering Information Part Number HSU100P04 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5