HSM24P03

HSM24P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM24P03 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSM24P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS -30 V RDS(ON),typ 3.8 mΩ ID -24 A SOP8 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -24 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 - A IDM Pulsed Drain Current2 -96 A 2.1 W 4 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC www.hs-semi.cn Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Thermal Resistance Junction-case 1 Ver 2.0 Typ. Max. Unit --- - ℃/W --- 60 ℃/W --- 24 ℃/W 1 HSM24P03 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V , ID=-17A --- 3.8 4.8 m VGS=-4.5V , ID=-10A --- 5.8 7.8 m VGS=VDS , ID =-250uA V -1.2 -1.6 -2.2 VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -10 VGS=±20V , VDS=0V --- --- ±100 --- 110 --- --- 15 --- IGSS Gate-Source Leakage Current Qg Total Gate Charge (-10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 18 --- Turn-On Delay Time --- 28 --- Td(on) Tr Td(off) VDS=-15V , VGS=-10V , ID=-10A Rise Time VDD=-15V , VGS=-10V , RG=6, --- 17 --- Turn-Off Delay Time ID=-1A --- 180 --- uA nA nC ns Fall Time --- 73 --- Ciss Input Capacitance --- 6240 --- Coss Output Capacitance --- 780 --- Crss Reverse Transfer Capacitance --- 410 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- -24 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Tf VDS=-25V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Diode Forward Current1,5 Voltage2 Conditions Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSM24P03 P-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.2 Normalized RDSON vs. TJ Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. Tj Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance www.hs-semi.cn Fig.6 Maximum Safe Operation Area Ver 2.0 3 HSM24P03 P-Ch 30V Fast Switching MOSFETs Fig.8 Unclamped Inductive Switching Waveform Fig.7 Switching Time Waveform www.hs-semi.cn Ver 2.0 4 HSM24P03 P-Ch 30V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5