HY1803C2

HY1803C2 Single N-Channel Enhancement Mode MOSFET Feature Description z Pin Description 30V/80A D D D D D D D D RDS(ON)= 2.4mΩ(typ.) @VGS = 10V RDS(ON)= 2.8mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection N-Channel MOSFET Ordering and Marking Information Package Code C2 C2: PPAK5*6-8L HY1803 Date Code YYXXX WW YYXXXJWW G Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY1803C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 150 °C -55 to 150 °C Tc=25°C 80 A Tc=25°C 320 A Tc=25°C 80 A Tc=100°C 51 A Tc=25°C 52 W Tc=100°C 21 W TJ TSTG IS Storage Temperature Range Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RTJC Thermal Resistance, Junction-to-Case 2.4 °C/W RTJA Thermal Resistance, Junction-to-Ambient ** 62 °C/W EAS SinglePulsed-Avalanche Energy *** 287.4 mJ L=0.1mH * Repetitive rating˗pulse width limited by max.junction temperature. ** Surface mounted on FR-4 board. *** Limited by TJmax , starting TJ=25°C, L = 0.1mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY1803 Unit Min Typ. Max 30 - - V - - 1 μA - - 5 μA 3 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=250μA VDS=30V,VGS=0V TJ=55°C Gate Threshold Voltage VDS=VGS, IDS=250μA 1 1.4 Gate-Source Leakage Current VGS=f20V,VDS=0V - - VGS=10V,IDS=20A - 2.4 3.0 VGS=4.5V,IDS=20A - 2.8 3.5 mΩ ISD=20A,VGS=0V - 0.8 1.2 V - 23 - ns - 58 - nC Drain-Source On-State Resistance ±100 nA Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=20A,dISD/dt=100A/μs www.hymexa.com V1.0 2 HY1803C2 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY1803 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.9 - Ciss Input Capacitance VGS=0V, - 4726 - Coss Output Capacitance VDS=25V, - 469 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 322 - td(ON) Turn-on Delay Time - 13 - Tr Turn-on Rise Time VDD=20V,RG=3.3Ω, - 11 - td(OFF) Turn-off Delay Time IDS=20A,VGS=10V - 41 - - 14 - - 120 - - 9 - - 26 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =24V, VGS=10V, ID=20A nC Note: *Pulse testˈpulse width ≤ 300usˈduty cycle ≤ 2% V1.0 www.hymexa.com 3 HY1803C2 Typical Operating Characteristics Figure 1: Power Dissipation Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) VGS=10V Tc-Case Temperature(ć) Tc-Case Temperature(ć) Thermal ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal Impedance, Junction-to-Case Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) ID-Drain Current(A) www.hymexa.com 4 V1.0 HY1803C2 Typical Operating Characteristics(Cont.) Figure 7: On-Resistance vs. Temperature IS-Source Current (A) Normalized On-Resistance Figure 8: Source-Drain Diode Forward Tj-Junction Temperature (ć) VSD-Source-Drain Voltage(V) Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) Vgs=24V VDS-Drain-Source Voltage (V) www.hymexa.com QG-Gate Charge (Q&) 5 V1.0 HY1803C2 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 6 V1.0 HY1803C2 Device Per Unit Package Type Unit Quantity PPAK5*6-8L Reel 5000 Package Information PPAK5*6-8L www.hymexa.com 7 V1.0 HY1803C2 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (T c) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 8 V1.0 HY1803C2 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mmϢ Volume mmϢ Thickness