HY3010P/B
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
100V/100A
RDS(ON)=10mΩ(typ.) @VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Lead-Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
Applications
Power Switching application
Uninterruptible Power Supply
N-Channel MOSFET
Ordering and Marking Information
Package Code
P
B
HY3010
HY3010
YYXXXJWWG
YYXXXJWWG
P :TO-220FB-3L
B:TO-263-2L
Date Code
YYXXX WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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1
V1.0
HY3010P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±25
V
Maximum Junction Temperature
175
°C
TJ
TSTG
IS
Storage Temperature Range
-55
Source Current-Continuous(Body Diode)
°C
to
Tc=25°C
175
100
A
Tc=25°C
380**
A
Tc=25°C
100
A
Tc=100°C
74
A
Tc=25°C
192
W
Tc=100°C
96
W
Mounted on Large Heat Sink
Note:
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RJC
Thermal Resistance, Junction-to-Case
0.78
°C/W
RJA
Thermal Resistance, Junction-to-Ambient **
62.5
°C/W
EAS
Single Pulsed-Avalanche Energy ***
575
mJ
*
**
***
L=0.5mH
Repetitive rating;pulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
Limited by TJmax , starting TJ=25°C, L = 0.5mH, VDS=80V, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY3010
Unit
Min
Typ.
Max
VGS=0V,IDS=250μA
100
-
-
V
VDS=100V,VGS=0V
-
-
1
μA
-
-
10
μA
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
VGS(th)
IGSS
RDS(ON)*
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS=250μA
2
3
4
V
Gate-Source Leakage Current
VGS=±25V,VDS=0V
-
-
±100
nA
Drain-Source On-State Resistance
VGS=10V,IDS=50A
-
10
12
mΩ
ISD=50A,VGS=0V
-
0.8
1
V
-
35
-
ns
-
50
-
nC
Diode Characteristics
VSD*
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
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ISD=50A,dISD/dt=100A/μs
2
V1.0
HY3010P/B
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HY3010
Min
Typ.
Max
Unit
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1
MHz
-
1.3
-
Ciss
Input Capacitance
VGS=0V,
-
3100
-
Coss
Output Capacitance
VDS=25V,
-
850
-
Crss
Reverse Transfer Capacitance
Frequency=1.0MHz
-
260
-
td(ON)
Turn-on Delay Time
-
18
38
Tr
Turn-on Rise Time
VDD=50V,RG=6Ω,
-
50
102
td(OFF)
Turn-off Delay Time
IDS=50A,VGS=10V
-
58
116
-
68
135
-
76
100
-
12
-
-
26
-
Tf
Turn-off Fall Time
Gate Charge
Ω
pF
ns
Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=80V, VGS=10V,
ID=50A
nC
Note: *Pulse test,pulse width ≤ 300us,duty cycle ≤ 2%
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3
V1.0
HY3010P/B
Typical Operating Characteristics
Drain Current
Power Dissipation
210
135
120
ID - Drain Current (A)
Ptot - Power (W)
180
150
120
90
60
30
90
75
60
45
30
15
o
0
limited by package
105
TC=25 C
0
20 40
o
60
0
80 100 120 140 160 180 200
TC=25 C,VG=10V
0
20
40 60 80 100 120 140 160 180 200
Tc - Case Temperature (°C)
Tc - Case Temperature (°C)
Safe Operation Area
600
1ms
Rd
s(o
n)
Lim
it
ID - Drain Current (A)
100us
100
10ms
10
DC
1
o
TC=25 C
0.1
0.01
0.1
1
10
100
500
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
1
Normalized Effective Transient
Duty = 0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
o
RθJA : 62.5 C/W
0.0001
0.0001
0.001
0.1
0.01
1
10
S uare Wave Pulse Duration sec
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4
V1.0
HY3010P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
13.0
160
12.5
140
RDS(ON) - On - Resistance (mΩ)
VGS= 6,7,8,9,10V
ID - Drain Current (A)
120
100
5.5V
80
5V
60
4.5V
40
20
0
12.0
11.5
VGS =10V
11.0
10.5
10.0
9.5
9.0
8.5
8.0
0
1
2
3
4
5
6
20
40
60
80
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Source-Drain Diode Forward
100
175
2.4
2.2
0
VGS = 10V
100
IDS = 50A
1.8
IS - Source Current (A)
Normalized On Resistance
2.0
1.6
1.4
1.2
1.0
0.8
o
Tj=175 C
10
o
Tj=25 C
1
0.6
0.4
o
0.2
-50 -25
RON@Tj=25 C: 10m Ω
0
25
50
0.1
0.0
75 100 125 150 175
Tj - Junction Temperature (°C)
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0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Source-Drain Voltage (V)
5
V1.0
HY3010P/B
Typical Operating Characteristics (Cont.)
Capacitance
Gate Charge
10
5500
Frequency=1MHz
5000
VGS - Gate-source Voltage (V)
C - Capacitance (pF)
4500
4000
3500
Ciss
3000
2500
2000
1500
Coss
1000
Crss
500
0
0
5
IDS= 50A
8
7
6
5
4
3
2
1
10
15
20
25
30
35
0
40
VDS - Drain - Source Voltage (V)
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VDS= 80V
9
0
10
20
40
50
60
70
80
90
QG - Gate Charge (nC)
6
V1.0
HY3010P/B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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7
V1.0
HY3010P/B
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
TO-263-2L
Tube
Tube
50
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
SYMBOL
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mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.25
1.30
1.45
A2
2.20
2.40
2.60
b
0.70
0.80
0.95
b2
1.17
1.27
1.47
c
0.40
0.50
0.65
D
15.10
15.60
16.10
D1
8.80
9.10
9.40
D2
5.50
-
-
E
9.70
10.00
10.30
E3
7.00
-
-
e
2.54 BSC
e1
5.08 BSC
H1
6.25
6.50
6.85
L
12.75
13.50
13.80
L1
-
3.10
3.40
ΦP
3.40
3.60
3.80
Q
2.60
2.80
3.00
8
V1.0
HY3010P/B
Package Information
TO-263-2L
COMMON DIMENSIONS
SYMBOL
mm
MIN
NOM
MAX
A
4.37
4.57
4.77
A1
1.22
1.27
1.42
A2
2.49
2.69
2.89
A3
0
0.13
0.25
b
0.7
0.81
0.96
b1
1.17
1.27
1.47
c
0.3
0.38
0.53
D1
8.5
8.7
8.9
D4
6.6
-
-
E
9.86
10.16
10.36
E5
7.06
-
-
e
2.54 BSC
H
14.7
15.1
15.5
H2
1.07
1.27
1.47
L
2
2.3
2.6
L1
1.4
1.55
1.7
L4
θ
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0.25 BSC
0°
5°
9
9°
V1.0
HY3010P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmaxto TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax)
Time 25°C to peak temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
60-120 seconds
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
217 °C
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
20** seconds
30** seconds
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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10
V1.0
HY3010P/B
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mm³
Volume mm³
Thickness
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